Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

Chang Soo Park; Yu Zhao; Yoon Shon; Im Taek Yoon; Cheol Jin Lee; Jin Dong Song; Haigun Lee; Eun Kyu Kim

doi:10.1039/c5tc00051c

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

Chang Soo Park
, Yu Zhao
, Yoon Shon
, Im Taek Yoon
, Cheol Jin Lee
, Jin Dong Song
, Haigun Lee^*
, Eun Kyu Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H_c) of 188 Oe and a remanent magnetization of 102 emu cm^-3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm² V^-1 s^-1 at room temperature.

Original language	English
Pages (from-to)	4235-4238
Number of pages	4
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	17
DOIs	https://doi.org/10.1039/c5tc00051c
Publication status	Published - 2015 May 7

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Publisher Copyright:
© The Royal Society of Chemistry 2015.

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

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10.1039/c5tc00051c

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title = "Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition",

abstract = "We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (Hc) of 188 Oe and a remanent magnetization of 102 emu cm-3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm2 V-1 s-1 at room temperature.",

author = "Park, \{Chang Soo\} and Yu Zhao and Yoon Shon and Yoon, \{Im Taek\} and Lee, \{Cheol Jin\} and Song, \{Jin Dong\} and Haigun Lee and Kim, \{Eun Kyu\}",

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year = "2015",

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doi = "10.1039/c5tc00051c",

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T1 - Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

AU - Park, Chang Soo

AU - Zhao, Yu

AU - Shon, Yoon

AU - Yoon, Im Taek

AU - Lee, Cheol Jin

AU - Song, Jin Dong

AU - Lee, Haigun

AU - Kim, Eun Kyu

PY - 2015/5/7

Y1 - 2015/5/7

N2 - We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (Hc) of 188 Oe and a remanent magnetization of 102 emu cm-3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm2 V-1 s-1 at room temperature.

AB - We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (Hc) of 188 Oe and a remanent magnetization of 102 emu cm-3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm2 V-1 s-1 at room temperature.

UR - https://www.scopus.com/pages/publications/84928539911

U2 - 10.1039/c5tc00051c

DO - 10.1039/c5tc00051c

M3 - Article

AN - SCOPUS:84928539911

SN - 2050-7534

VL - 3

SP - 4235

EP - 4238

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 17

ER -

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

Abstract

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