Abstract
Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal eVaporation and oxidation. This study focuses on characterizing an electron-selective passivated contact layer with this oxidized method. Subsequently, the SiO2/TiO2 stack was examined using high-resolution transmission electron microscopy. The phase and chemical composition of the titanium oxide films were analyzed using X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The passivation quality of each layer was confirmed by measuring the carrier lifetime using quasi-steady-state photoconductance, providing an implied open circuit voltage of 644 mV. UV–vis spectroscopy and UV photoelectron spectroscopy analyses demonstrated the band alignment and carrier selectivity of the TiO2 layers. Band offsets of ~0.33 and ~2.6 eV relative to the conduction and valence bands, respectively, were confirmed for titanium oxide and the silicon interface.
Original language | English |
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Article number | 678 |
Journal | Energies |
Volume | 13 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2020 |
Keywords
- Band alignment
- Carrier-selective contact cell
- Electron-selective contact
- Titanium oxide
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Building and Construction
- Fuel Technology
- Engineering (miscellaneous)
- Energy Engineering and Power Technology
- Energy (miscellaneous)
- Control and Optimization
- Electrical and Electronic Engineering