Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth

A. Y. Polyakov; A. V. Govorkov; N. B. Smirnov; A. V. Markov; In Hwan Lee; Jin Woo Ju; S. Yu Karpov; N. M. Shmidt; S. J. Pearton

doi:10.1063/1.3153967

Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, In Hwan Lee, Jin Woo Ju, S. Yu Karpov, N. M. Shmidt, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

High resolution x-ray diffraction, electron beam induced current, capacitance-voltage profiling, admittance spectroscopy, deep level transient spectroscopy (DLTS), microcathodoluminescence (MCL) spectra and imaging were performed for multi-quantum-well (MQW) GaN/InGaN p-n junctions grown on epitaxial laterally overgrown (ELOG) n-GaN platform layers. These experiments show a very good crystalline quality of the MQW ELOG GaN/InGaN structures with a dislocation density of ∼ 10⁶ cm^-2 in the laterally overgrown ELOG wings regions. Admittance and DLTS spectra show the presence of a prominent electron-trap signal with activation energy ∼0.4 eV likely originating from electron activation from the lowest occupied state in the quantum wells. MCL spectra clearly show a redshift of luminescence in the laterally grown ELOG wings compared to the normally grown ELOG windows. Modeling based on solving Poisson-Schroedinger equations suggests that the main reason for the observed redshift is a higher indium content in the wings.

Original language	English
Article number	123708
Journal	Journal of Applied Physics
Volume	105
Issue number	12
DOIs	https://doi.org/10.1063/1.3153967
Publication status	Published - 2009
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported, in part, by the RFBR Grant Nos. 07-02-13523-ofi-c and 08-02-00058-a. The work at UF is partially supported by the Army Research Office DAAD19-01-1-0603 and DMR 0700416, Dr. L. Hess. The authors thank Dr. E.M. Arakceeva, Dr. I.A. Smirnova, and Dr. M.M. Kulagina at the Ioffe Institute for preparing the diode structures.

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.3153967

Cite this

@article{1000607fcb2145d49498d93606d170d8,

title = "Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth",

abstract = "High resolution x-ray diffraction, electron beam induced current, capacitance-voltage profiling, admittance spectroscopy, deep level transient spectroscopy (DLTS), microcathodoluminescence (MCL) spectra and imaging were performed for multi-quantum-well (MQW) GaN/InGaN p-n junctions grown on epitaxial laterally overgrown (ELOG) n-GaN platform layers. These experiments show a very good crystalline quality of the MQW ELOG GaN/InGaN structures with a dislocation density of ∼ 106 cm-2 in the laterally overgrown ELOG wings regions. Admittance and DLTS spectra show the presence of a prominent electron-trap signal with activation energy ∼0.4 eV likely originating from electron activation from the lowest occupied state in the quantum wells. MCL spectra clearly show a redshift of luminescence in the laterally grown ELOG wings compared to the normally grown ELOG windows. Modeling based on solving Poisson-Schroedinger equations suggests that the main reason for the observed redshift is a higher indium content in the wings.",

author = "Polyakov, {A. Y.} and Govorkov, {A. V.} and Smirnov, {N. B.} and Markov, {A. V.} and Lee, {In Hwan} and Ju, {Jin Woo} and Karpov, {S. Yu} and Shmidt, {N. M.} and Pearton, {S. J.}",

note = "Funding Information: The work at IRM was supported, in part, by the RFBR Grant Nos. 07-02-13523-ofi-c and 08-02-00058-a. The work at UF is partially supported by the Army Research Office DAAD19-01-1-0603 and DMR 0700416, Dr. L. Hess. The authors thank Dr. E.M. Arakceeva, Dr. I.A. Smirnova, and Dr. M.M. Kulagina at the Ioffe Institute for preparing the diode structures.",

year = "2009",

doi = "10.1063/1.3153967",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth

AU - Polyakov, A. Y.

AU - Govorkov, A. V.

AU - Smirnov, N. B.

AU - Markov, A. V.

AU - Lee, In Hwan

AU - Ju, Jin Woo

AU - Karpov, S. Yu

AU - Shmidt, N. M.

AU - Pearton, S. J.

N1 - Funding Information: The work at IRM was supported, in part, by the RFBR Grant Nos. 07-02-13523-ofi-c and 08-02-00058-a. The work at UF is partially supported by the Army Research Office DAAD19-01-1-0603 and DMR 0700416, Dr. L. Hess. The authors thank Dr. E.M. Arakceeva, Dr. I.A. Smirnova, and Dr. M.M. Kulagina at the Ioffe Institute for preparing the diode structures.

PY - 2009

Y1 - 2009

N2 - High resolution x-ray diffraction, electron beam induced current, capacitance-voltage profiling, admittance spectroscopy, deep level transient spectroscopy (DLTS), microcathodoluminescence (MCL) spectra and imaging were performed for multi-quantum-well (MQW) GaN/InGaN p-n junctions grown on epitaxial laterally overgrown (ELOG) n-GaN platform layers. These experiments show a very good crystalline quality of the MQW ELOG GaN/InGaN structures with a dislocation density of ∼ 106 cm-2 in the laterally overgrown ELOG wings regions. Admittance and DLTS spectra show the presence of a prominent electron-trap signal with activation energy ∼0.4 eV likely originating from electron activation from the lowest occupied state in the quantum wells. MCL spectra clearly show a redshift of luminescence in the laterally grown ELOG wings compared to the normally grown ELOG windows. Modeling based on solving Poisson-Schroedinger equations suggests that the main reason for the observed redshift is a higher indium content in the wings.

AB - High resolution x-ray diffraction, electron beam induced current, capacitance-voltage profiling, admittance spectroscopy, deep level transient spectroscopy (DLTS), microcathodoluminescence (MCL) spectra and imaging were performed for multi-quantum-well (MQW) GaN/InGaN p-n junctions grown on epitaxial laterally overgrown (ELOG) n-GaN platform layers. These experiments show a very good crystalline quality of the MQW ELOG GaN/InGaN structures with a dislocation density of ∼ 106 cm-2 in the laterally overgrown ELOG wings regions. Admittance and DLTS spectra show the presence of a prominent electron-trap signal with activation energy ∼0.4 eV likely originating from electron activation from the lowest occupied state in the quantum wells. MCL spectra clearly show a redshift of luminescence in the laterally grown ELOG wings compared to the normally grown ELOG windows. Modeling based on solving Poisson-Schroedinger equations suggests that the main reason for the observed redshift is a higher indium content in the wings.

UR - http://www.scopus.com/inward/record.url?scp=67650242098&partnerID=8YFLogxK

U2 - 10.1063/1.3153967

DO - 10.1063/1.3153967

M3 - Article

AN - SCOPUS:67650242098

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123708

ER -

Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this