Abstract
InAlN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates were subjected to 5-15 MeV high energy protons with a fixed 5 × 10 15cm -2 fluence. The saturation currents and gate leakage currents of all the proton-irradiated InAlN/GaN HEMTs were degraded. Proton irradiation at lower energy was found to degrade the direct current (DC) current-voltage (I-V) characteristics more severely than higher-energy irradiation, because the energy loss component of the lower energy protons was larger than those of higher-energy protons in the vicinity of the 2-dimensional electron gas conducting channel. Our experimental results were consistent with stopping and range of ions in matter simulation results of the energy deposition profile by the protons.
Original language | English |
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Article number | 012107 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2012 Jan 2 |
Bibliographical note
Funding Information:The work at UF is supported by an AFOSR MURI monitored by Jim Hwang and by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020. The research at Korea University was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (No. 20104010100640) and by LG Innotek- Korea University Nano-Photonics Program.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)