Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies

H. Y. Kim; C. F. Lo; L. Liu; F. Ren; J. Kim; S. J. Pearton

doi:10.1063/1.3673906

Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies

H. Y. Kim, C. F. Lo, L. Liu, F. Ren, J. Kim, S. J. Pearton

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

InAlN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates were subjected to 5-15 MeV high energy protons with a fixed 5 × 10 ¹⁵cm ^-2 fluence. The saturation currents and gate leakage currents of all the proton-irradiated InAlN/GaN HEMTs were degraded. Proton irradiation at lower energy was found to degrade the direct current (DC) current-voltage (I-V) characteristics more severely than higher-energy irradiation, because the energy loss component of the lower energy protons was larger than those of higher-energy protons in the vicinity of the 2-dimensional electron gas conducting channel. Our experimental results were consistent with stopping and range of ions in matter simulation results of the energy deposition profile by the protons.

Original language	English
Article number	012107
Journal	Applied Physics Letters
Volume	100
Issue number	1
DOIs	https://doi.org/10.1063/1.3673906
Publication status	Published - 2012 Jan 2

Bibliographical note

Funding Information:
The work at UF is supported by an AFOSR MURI monitored by Jim Hwang and by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020. The research at Korea University was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (No. 20104010100640) and by LG Innotek- Korea University Nano-Photonics Program.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies",

abstract = "InAlN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates were subjected to 5-15 MeV high energy protons with a fixed 5 × 10 15cm -2 fluence. The saturation currents and gate leakage currents of all the proton-irradiated InAlN/GaN HEMTs were degraded. Proton irradiation at lower energy was found to degrade the direct current (DC) current-voltage (I-V) characteristics more severely than higher-energy irradiation, because the energy loss component of the lower energy protons was larger than those of higher-energy protons in the vicinity of the 2-dimensional electron gas conducting channel. Our experimental results were consistent with stopping and range of ions in matter simulation results of the energy deposition profile by the protons.",

author = "Kim, {H. Y.} and Lo, {C. F.} and L. Liu and F. Ren and J. Kim and Pearton, {S. J.}",

note = "Funding Information: The work at UF is supported by an AFOSR MURI monitored by Jim Hwang and by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020. The research at Korea University was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (No. 20104010100640) and by LG Innotek- Korea University Nano-Photonics Program.",

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AU - Kim, H. Y.

AU - Lo, C. F.

AU - Liu, L.

AU - Ren, F.

AU - Kim, J.

AU - Pearton, S. J.

N1 - Funding Information: The work at UF is supported by an AFOSR MURI monitored by Jim Hwang and by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020. The research at Korea University was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (No. 20104010100640) and by LG Innotek- Korea University Nano-Photonics Program.

PY - 2012/1/2

Y1 - 2012/1/2

N2 - InAlN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates were subjected to 5-15 MeV high energy protons with a fixed 5 × 10 15cm -2 fluence. The saturation currents and gate leakage currents of all the proton-irradiated InAlN/GaN HEMTs were degraded. Proton irradiation at lower energy was found to degrade the direct current (DC) current-voltage (I-V) characteristics more severely than higher-energy irradiation, because the energy loss component of the lower energy protons was larger than those of higher-energy protons in the vicinity of the 2-dimensional electron gas conducting channel. Our experimental results were consistent with stopping and range of ions in matter simulation results of the energy deposition profile by the protons.

AB - InAlN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates were subjected to 5-15 MeV high energy protons with a fixed 5 × 10 15cm -2 fluence. The saturation currents and gate leakage currents of all the proton-irradiated InAlN/GaN HEMTs were degraded. Proton irradiation at lower energy was found to degrade the direct current (DC) current-voltage (I-V) characteristics more severely than higher-energy irradiation, because the energy loss component of the lower energy protons was larger than those of higher-energy protons in the vicinity of the 2-dimensional electron gas conducting channel. Our experimental results were consistent with stopping and range of ions in matter simulation results of the energy deposition profile by the protons.

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JO - Applied Physics Letters

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IS - 1

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ER -

Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies

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