Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies

H. Y. Kim, C. F. Lo, L. Liu, F. Ren, J. Kim, S. J. Pearton

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23 Citations (Scopus)


InAlN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates were subjected to 5-15 MeV high energy protons with a fixed 5 × 10 15cm -2 fluence. The saturation currents and gate leakage currents of all the proton-irradiated InAlN/GaN HEMTs were degraded. Proton irradiation at lower energy was found to degrade the direct current (DC) current-voltage (I-V) characteristics more severely than higher-energy irradiation, because the energy loss component of the lower energy protons was larger than those of higher-energy protons in the vicinity of the 2-dimensional electron gas conducting channel. Our experimental results were consistent with stopping and range of ions in matter simulation results of the energy deposition profile by the protons.

Original languageEnglish
Article number012107
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2012 Jan 2

Bibliographical note

Funding Information:
The work at UF is supported by an AFOSR MURI monitored by Jim Hwang and by HDTRA (Don Silversmith) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020. The research at Korea University was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (No. 20104010100640) and by LG Innotek- Korea University Nano-Photonics Program.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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