Proton irradiation effects on AlN/GaN high electron mobility transistors

C. F. Lo, C. Y. Chang, B. H. Chu, H. Y. Kim, J. Kim, David A. Cullen, Lin Zhou, David J. Smith, S. J. Pearton, Amir Dabiran, B. Cui, P. P. Chow, S. Jang, F. Ren

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21 Citations (Scopus)


AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

Original languageEnglish
Pages (from-to)L47-L51
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number5
Publication statusPublished - 2010 Sept

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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