Proton irradiation effects on Sb-based heterojunction bipolar transistors

C. F. Lo, H. Y. Kim, J. Kim, Shu Han Chen, Sheng Yu Wang, Jen Inn Chyi, B. Y. Chou, K. H. Chen, Y. L. Wang, C. Y. Chang, S. J. Pearton, L. I. Kravchenko, S. Jang, F. Ren

Research output: Contribution to journalArticlepeer-review


In0.52Al0.48As/In0.39 Ga 0.61As0.77Sb0.23/In0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 1011 to 2× 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 1011 cm-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.

Original languageEnglish
Pages (from-to)L33-L37
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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