Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs

Akil K. Sutton; Becca M. Haugerud; Yuan Lu; Wei Min Lance Kuo; John D. Cressler; Paul W. Marshall; Robert A. Reed; Jae Sung Rieh; Greg Freeman; David Ahlgren

doi:10.1109/TNS.2004.839302

Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs

Akil K. Sutton, Becca M. Haugerud, Yuan Lu, Wei Min Lance Kuo, John D. Cressler, Paul W. Marshall, Robert A. Reed, Jae Sung Rieh, Greg Freeman, David Ahlgren

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

We report, for the first time, the impact of proton irradiation on fourth-generation SiGe heterojunction bipolar transistors (HBTs) having a record peak unity gain cutoff frequency of 350 GHz. The implications of aggressive vertical scaling on the observed proton tolerance is investigated through comparisons of the pre-and post-radiation ac and dc figures-of-merit to observed results from prior SiGe HBT technology nodes irradiated under identical conditions. In addition, transistors of varying breakdown voltage are used to probe the differences in proton tolerance as a function of collector doping. Our findings indicate that SiGe HBTs continue to exhibit impressive total dose tolerance, even at unprecedented levels of vertical profile scaling and frequency response. Negligible total dose degradation in β (0.3%), f _T and f_max (6%) are observed in the circuit bias regime, suggesting that SiGe HBT BiCMOS technology is potentially a formidable contender for high-performance space-borne applications.

Original language	English
Pages (from-to)	3736-3742
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	51
Issue number	6 II
DOIs	https://doi.org/10.1109/TNS.2004.839302
Publication status	Published - 2004 Dec
Externally published	Yes

Keywords

Breakdwon voltage
Heterojunction bipolar transistors (HTB)
Proton tolerance
SiGe
Silicon-germanium
Technology scaling

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2004.839302

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title = "Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs",

abstract = "We report, for the first time, the impact of proton irradiation on fourth-generation SiGe heterojunction bipolar transistors (HBTs) having a record peak unity gain cutoff frequency of 350 GHz. The implications of aggressive vertical scaling on the observed proton tolerance is investigated through comparisons of the pre-and post-radiation ac and dc figures-of-merit to observed results from prior SiGe HBT technology nodes irradiated under identical conditions. In addition, transistors of varying breakdown voltage are used to probe the differences in proton tolerance as a function of collector doping. Our findings indicate that SiGe HBTs continue to exhibit impressive total dose tolerance, even at unprecedented levels of vertical profile scaling and frequency response. Negligible total dose degradation in β (0.3%), f T and fmax (6%) are observed in the circuit bias regime, suggesting that SiGe HBT BiCMOS technology is potentially a formidable contender for high-performance space-borne applications.",

keywords = "Breakdwon voltage, Heterojunction bipolar transistors (HTB), Proton tolerance, SiGe, Silicon-germanium, Technology scaling",

author = "Sutton, {Akil K.} and Haugerud, {Becca M.} and Yuan Lu and Kuo, {Wei Min Lance} and Cressler, {John D.} and Marshall, {Paul W.} and Reed, {Robert A.} and Rieh, {Jae Sung} and Greg Freeman and David Ahlgren",

note = "Funding Information: Manuscript received July 20, 2004; revised September 6, 2004. This work was supported by DTRA under the Radiation Tolerant Microelectronics Program, NASA-GSFC under the Electronics Radiation Characterization Program, IBM, and the Georgia Electronic Design Center at Georgia Tech. A. K. Sutton, J. D. Cressler, B. M. Haugerud, W.-M. L. Kuo, and Y. Lu are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30308 USA (e-mail: asutton@ece.gatech.edu). P. W. Marshall and R. A. Reed are with a consultant to NASA-GSFC, Green-belt, MD 20771 USA. J.-S. Rieh, G. Freeman, and D. Ahlgren are with the IBM Microelectronics, Hopewell Junction, NY 12533 USA. Digital Object Identifier 10.1109/TNS.2004.839302",

year = "2004",

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doi = "10.1109/TNS.2004.839302",

language = "English",

volume = "51",

pages = "3736--3742",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs

AU - Sutton, Akil K.

AU - Haugerud, Becca M.

AU - Lu, Yuan

AU - Kuo, Wei Min Lance

AU - Cressler, John D.

AU - Marshall, Paul W.

AU - Reed, Robert A.

AU - Rieh, Jae Sung

AU - Freeman, Greg

AU - Ahlgren, David

N1 - Funding Information: Manuscript received July 20, 2004; revised September 6, 2004. This work was supported by DTRA under the Radiation Tolerant Microelectronics Program, NASA-GSFC under the Electronics Radiation Characterization Program, IBM, and the Georgia Electronic Design Center at Georgia Tech. A. K. Sutton, J. D. Cressler, B. M. Haugerud, W.-M. L. Kuo, and Y. Lu are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30308 USA (e-mail: asutton@ece.gatech.edu). P. W. Marshall and R. A. Reed are with a consultant to NASA-GSFC, Green-belt, MD 20771 USA. J.-S. Rieh, G. Freeman, and D. Ahlgren are with the IBM Microelectronics, Hopewell Junction, NY 12533 USA. Digital Object Identifier 10.1109/TNS.2004.839302

PY - 2004/12

Y1 - 2004/12

N2 - We report, for the first time, the impact of proton irradiation on fourth-generation SiGe heterojunction bipolar transistors (HBTs) having a record peak unity gain cutoff frequency of 350 GHz. The implications of aggressive vertical scaling on the observed proton tolerance is investigated through comparisons of the pre-and post-radiation ac and dc figures-of-merit to observed results from prior SiGe HBT technology nodes irradiated under identical conditions. In addition, transistors of varying breakdown voltage are used to probe the differences in proton tolerance as a function of collector doping. Our findings indicate that SiGe HBTs continue to exhibit impressive total dose tolerance, even at unprecedented levels of vertical profile scaling and frequency response. Negligible total dose degradation in β (0.3%), f T and fmax (6%) are observed in the circuit bias regime, suggesting that SiGe HBT BiCMOS technology is potentially a formidable contender for high-performance space-borne applications.

AB - We report, for the first time, the impact of proton irradiation on fourth-generation SiGe heterojunction bipolar transistors (HBTs) having a record peak unity gain cutoff frequency of 350 GHz. The implications of aggressive vertical scaling on the observed proton tolerance is investigated through comparisons of the pre-and post-radiation ac and dc figures-of-merit to observed results from prior SiGe HBT technology nodes irradiated under identical conditions. In addition, transistors of varying breakdown voltage are used to probe the differences in proton tolerance as a function of collector doping. Our findings indicate that SiGe HBTs continue to exhibit impressive total dose tolerance, even at unprecedented levels of vertical profile scaling and frequency response. Negligible total dose degradation in β (0.3%), f T and fmax (6%) are observed in the circuit bias regime, suggesting that SiGe HBT BiCMOS technology is potentially a formidable contender for high-performance space-borne applications.

KW - Breakdwon voltage

KW - Heterojunction bipolar transistors (HTB)

KW - Proton tolerance

KW - SiGe

KW - Silicon-germanium

KW - Technology scaling

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SN - 0018-9499

VL - 51

SP - 3736

EP - 3742

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 II

ER -

Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs

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Keywords

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