The Schottky barrier height of Pt contacts on n-(Ga,Mn)N (n∼3.5×1017cm-3) thin films was obtained from current-voltage measurements as a function of temperature. The resulting values ranged from 0.82±0.04eV at 25°C to 0.79±0.06eV at 100°C with saturation current densities of 4.28×10-8Acm-2 (25°C) to 8.42×10-5Acm-2 (100°C), respectively. The barrier height at room temperature obtained from an activation energy plot was 0.91±0.06eV. The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on Al2O3 substrates. The measured barrier height for Pt on n-(Ga,Mn)N is lower than for the value reported on n-GaN(1.08 eV).
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2002 Jul 22|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)