Pt Schottky contacts to n-(Ga,Mn)N

Jihyun Kim; F. Ren; G. T. Thaler; M. E. Overberg; C. R. Abernathy; S. J. Pearton; R. G. Wilson

doi:10.1063/1.1496130

Pt Schottky contacts to n-(Ga,Mn)N

Jihyun Kim, F. Ren, G. T. Thaler, M. E. Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The Schottky barrier height of Pt contacts on n-(Ga,Mn)N (n∼3.5×10¹⁷cm^-3) thin films was obtained from current-voltage measurements as a function of temperature. The resulting values ranged from 0.82±0.04eV at 25°C to 0.79±0.06eV at 100°C with saturation current densities of 4.28×10^-8Acm^-2 (25°C) to 8.42×10^-5Acm^-2 (100°C), respectively. The barrier height at room temperature obtained from an activation energy plot was 0.91±0.06eV. The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on Al₂O₃ substrates. The measured barrier height for Pt on n-(Ga,Mn)N is lower than for the value reported on n-GaN(1.08 eV).

Original language	English
Pages (from-to)	658-660
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	4
DOIs	https://doi.org/10.1063/1.1496130
Publication status	Published - 2002 Jul 22
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1496130

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title = "Pt Schottky contacts to n-(Ga,Mn)N",

abstract = "The Schottky barrier height of Pt contacts on n-(Ga,Mn)N (n∼3.5×1017cm-3) thin films was obtained from current-voltage measurements as a function of temperature. The resulting values ranged from 0.82±0.04eV at 25°C to 0.79±0.06eV at 100°C with saturation current densities of 4.28×10-8Acm-2 (25°C) to 8.42×10-5Acm-2 (100°C), respectively. The barrier height at room temperature obtained from an activation energy plot was 0.91±0.06eV. The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on Al2O3 substrates. The measured barrier height for Pt on n-(Ga,Mn)N is lower than for the value reported on n-GaN(1.08 eV).",

author = "Jihyun Kim and F. Ren and Thaler, {G. T.} and Overberg, {M. E.} and Abernathy, {C. R.} and Pearton, {S. J.} and Wilson, {R. G.}",

year = "2002",

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doi = "10.1063/1.1496130",

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TY - JOUR

T1 - Pt Schottky contacts to n-(Ga,Mn)N

AU - Kim, Jihyun

AU - Ren, F.

AU - Thaler, G. T.

AU - Overberg, M. E.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Wilson, R. G.

PY - 2002/7/22

Y1 - 2002/7/22

N2 - The Schottky barrier height of Pt contacts on n-(Ga,Mn)N (n∼3.5×1017cm-3) thin films was obtained from current-voltage measurements as a function of temperature. The resulting values ranged from 0.82±0.04eV at 25°C to 0.79±0.06eV at 100°C with saturation current densities of 4.28×10-8Acm-2 (25°C) to 8.42×10-5Acm-2 (100°C), respectively. The barrier height at room temperature obtained from an activation energy plot was 0.91±0.06eV. The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on Al2O3 substrates. The measured barrier height for Pt on n-(Ga,Mn)N is lower than for the value reported on n-GaN(1.08 eV).

AB - The Schottky barrier height of Pt contacts on n-(Ga,Mn)N (n∼3.5×1017cm-3) thin films was obtained from current-voltage measurements as a function of temperature. The resulting values ranged from 0.82±0.04eV at 25°C to 0.79±0.06eV at 100°C with saturation current densities of 4.28×10-8Acm-2 (25°C) to 8.42×10-5Acm-2 (100°C), respectively. The barrier height at room temperature obtained from an activation energy plot was 0.91±0.06eV. The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on Al2O3 substrates. The measured barrier height for Pt on n-(Ga,Mn)N is lower than for the value reported on n-GaN(1.08 eV).

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U2 - 10.1063/1.1496130

DO - 10.1063/1.1496130

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VL - 81

SP - 658

EP - 660

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Pt Schottky contacts to n-(Ga,Mn)N

Abstract

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