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Pt Schottky contacts to n-(Ga,Mn)N
Jihyun Kim
*
, F. Ren
, G. T. Thaler
, M. E. Overberg
, C. R. Abernathy
, S. J. Pearton
, R. G. Wilson
*
Corresponding author for this work
Research output
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Article
›
peer-review
2
Citations (Scopus)
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Keyphrases
Ni-Mn-Ga
100%
Schottky Contact
100%
N-GaN
66%
Barrier Height
66%
Activation Energy
33%
Room Temperature
33%
Schottky Barrier Height
33%
Current-voltage Measurements
33%
Pt Contacts
33%
Al2O3 Substrate
33%
Reverse Current
33%
Saturation Current Density
33%
Thermionic Emission
33%
Material Science
Schottky Barrier
100%
Activation Energy
50%
Thin Films
50%
Density
50%
Al2O3
50%
Chemistry
Thermionic Emission
50%