Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors

K. Heo; B. H. Hong; E. H. Lee; S. Y. Lee; S. Kim; S. W. Hwang

doi:10.1109/LED.2012.2226202

Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors

K. Heo, B. H. Hong, E. H. Lee, S. Y. Lee, S. Kim, S. W. Hwang

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Temperature $(T)$-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.

Original language	English
Article number	6403498
Pages (from-to)	247-249
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2226202
Publication status	Published - 2013

Keywords

Amorphous silicon-doped indium-zinc-oxide (a-SIZO)
barrier height
indium-zinc-oxide (IZO)
oxide-metal-oxide (OMO)
variable range hopping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2226202

Cite this

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title = "Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors",

abstract = "Temperature $(T)$-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.",

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T1 - Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors

AU - Heo, K.

AU - Hong, B. H.

AU - Lee, E. H.

AU - Lee, S. Y.

AU - Kim, S.

AU - Hwang, S. W.

PY - 2013

Y1 - 2013

N2 - Temperature $(T)$-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.

AB - Temperature $(T)$-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.

KW - Amorphous silicon-doped indium-zinc-oxide (a-SIZO)

KW - barrier height

KW - indium-zinc-oxide (IZO)

KW - oxide-metal-oxide (OMO)

KW - variable range hopping

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DO - 10.1109/LED.2012.2226202

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JO - IEEE Electron Device Letters

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Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

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