Quantitative investigation of magnetic domains with in-plane and out-of-plane easy axes in GaMnAs films by Hall effect

Sangyeop Lee; Hakjoon Lee; Taehee Yoo; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.4794283

Quantitative investigation of magnetic domains with in-plane and out-of-plane easy axes in GaMnAs films by Hall effect

Sangyeop Lee, Hakjoon Lee, Taehee Yoo, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Magnetic anisotropy of ferromagnetic semiconductor GaMnAs film with a low Mn concentration grown on a (001) GaAs substrate was investigated by Hall effect measurements. The presence of domains with in-plane and out-of-plane easy axes was identified in the film by analyzing hysteresis loops observed via the Hall resistance measured in various geometries. Quantitative analysis of the planar Hall resistance showed that the fraction of the sample with magnetic domains having a dominant out-of-plane easy axis was about 6 times larger than the fraction corresponding to domains with easy axis in the sample plane.

Original language	English
Article number	17C706
Journal	Journal of Applied Physics
Volume	113
Issue number	17
DOIs	https://doi.org/10.1063/1.4794283
Publication status	Published - 2013 May 7

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244), by the National Research Foundation of Korea (NRF) Grant funded by the Government of Korea (MEST) (No. 2010-0025880), and by the National Science Foundation Grant No. DMR10-05851.

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Quantitative investigation of magnetic domains with in-plane and out-of-plane easy axes in GaMnAs films by Hall effect",

abstract = "Magnetic anisotropy of ferromagnetic semiconductor GaMnAs film with a low Mn concentration grown on a (001) GaAs substrate was investigated by Hall effect measurements. The presence of domains with in-plane and out-of-plane easy axes was identified in the film by analyzing hysteresis loops observed via the Hall resistance measured in various geometries. Quantitative analysis of the planar Hall resistance showed that the fraction of the sample with magnetic domains having a dominant out-of-plane easy axis was about 6 times larger than the fraction corresponding to domains with easy axis in the sample plane.",

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note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244), by the National Research Foundation of Korea (NRF) Grant funded by the Government of Korea (MEST) (No. 2010-0025880), and by the National Science Foundation Grant No. DMR10-05851.",

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doi = "10.1063/1.4794283",

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AU - Lee, Sangyeop

AU - Lee, Hakjoon

AU - Yoo, Taehee

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244), by the National Research Foundation of Korea (NRF) Grant funded by the Government of Korea (MEST) (No. 2010-0025880), and by the National Science Foundation Grant No. DMR10-05851.

PY - 2013/5/7

Y1 - 2013/5/7

N2 - Magnetic anisotropy of ferromagnetic semiconductor GaMnAs film with a low Mn concentration grown on a (001) GaAs substrate was investigated by Hall effect measurements. The presence of domains with in-plane and out-of-plane easy axes was identified in the film by analyzing hysteresis loops observed via the Hall resistance measured in various geometries. Quantitative analysis of the planar Hall resistance showed that the fraction of the sample with magnetic domains having a dominant out-of-plane easy axis was about 6 times larger than the fraction corresponding to domains with easy axis in the sample plane.

AB - Magnetic anisotropy of ferromagnetic semiconductor GaMnAs film with a low Mn concentration grown on a (001) GaAs substrate was investigated by Hall effect measurements. The presence of domains with in-plane and out-of-plane easy axes was identified in the film by analyzing hysteresis loops observed via the Hall resistance measured in various geometries. Quantitative analysis of the planar Hall resistance showed that the fraction of the sample with magnetic domains having a dominant out-of-plane easy axis was about 6 times larger than the fraction corresponding to domains with easy axis in the sample plane.

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Quantitative investigation of magnetic domains with in-plane and out-of-plane easy axes in GaMnAs films by Hall effect

Abstract

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