Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

Tae Youb Kim; Nae Man Park; Kyung Hyun Kim; Gun Yong Sung; Young Woo Ok; Tae Yeon Seong; Cheol Jong Choi

doi:10.1063/1.1814429

Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

Tae Youb Kim, Nae Man Park, Kyung Hyun Kim, Gun Yong Sung, Young Woo Ok, Tae Yeon Seong, Cheol Jong Choi

Research output: Contribution to journal › Article › peer-review

307 Citations (Scopus)

Abstract

Silicon nanocrystals were in situ grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV)=1.16+11.8/d² is evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

Original language	English
Article number	3
Pages (from-to)	5355-5357
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	22
DOIs	https://doi.org/10.1063/1.1814429
Publication status	Published - 2004 Nov 29
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{563adb594dc9415b89ba400a798d49db,

title = "Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films",

abstract = "Silicon nanocrystals were in situ grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV)=1.16+11.8/d2 is evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.",

author = "Kim, {Tae Youb} and Park, {Nae Man} and Kim, {Kyung Hyun} and Sung, {Gun Yong} and Ok, {Young Woo} and Seong, {Tae Yeon} and Choi, {Cheol Jong}",

note = "Funding Information: This work was supported by the Ministry of Information and Communication in Korea.",

year = "2004",

month = nov,

day = "29",

doi = "10.1063/1.1814429",

language = "English",

volume = "85",

pages = "5355--5357",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

AU - Kim, Tae Youb

AU - Park, Nae Man

AU - Kim, Kyung Hyun

AU - Sung, Gun Yong

AU - Ok, Young Woo

AU - Seong, Tae Yeon

AU - Choi, Cheol Jong

N1 - Funding Information: This work was supported by the Ministry of Information and Communication in Korea.

PY - 2004/11/29

Y1 - 2004/11/29

N2 - Silicon nanocrystals were in situ grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV)=1.16+11.8/d2 is evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

AB - Silicon nanocrystals were in situ grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV)=1.16+11.8/d2 is evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

UR - http://www.scopus.com/inward/record.url?scp=10844286760&partnerID=8YFLogxK

U2 - 10.1063/1.1814429

DO - 10.1063/1.1814429

M3 - Article

AN - SCOPUS:10844286760

SN - 0003-6951

VL - 85

SP - 5355

EP - 5357

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 3

ER -

Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

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