Abstract
Photoluminescence (PL) efficiency increase up to 2.8 times was observed for GaN/InGaN multi-quantum-well (MQW) structures as a result of deposition of a thin layer of about 40-nm-diameter Ag nanoparticles (NPs) surrounded by SiO 2 shell. These Ag/SiO 2 NPs were prepared by sol-gel method. The amount of PL intensity enhancement decreased with increasing the SiO 2 shell thickness. PL intensity increase was accompanied by corresponding decrease of PL decay time and is ascribed to a strong coupling of MQW region to localized surface plasmons (LSPs) associated with Ag/SiO 2 NPs.
Original language | English |
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Article number | 251114 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2011 Dec 19 |
Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (2010-0019626, 2010-0026614).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)