Quantum spin-valley Hall effect in AB-stacked bilayer silicene

Kyu Won Lee, Cheol Eui Lee

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Our density functional theory calculations show that while AB-stacked bilayer silicene has a non-quantized spin-valley Chern number, there exist backscattering-free gapless edge states within the bulk gap, leading to a quantum spin-valley Hall effect. Using a tight-binding model for a honeycomb bilayer, we found that the interlayer potential difference and the staggered AB-sublattice potential lead to abrupt and gradual change of the valley Chern number from a quantized value to zero, respectively, while maintaining backscattering-free gapless edge states if the valley Chern number is not too close to zero. Under an inversion symmetry-breaking potential in the form of the staggered AB-sublattice potential, such as an antiferromagnetic order and a hexagonal diatomic sheet, a finite but non-quantized (spin-)valley Chern number can correspond to a quantum (spin-)valley Hall insulator.

Original languageEnglish
Article number19426
JournalScientific reports
Issue number1
Publication statusPublished - 2019 Dec 1

ASJC Scopus subject areas

  • General


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