Nanotube-based field effect transistors can be prepared by laying carbon nanotubes over electrolithographically deposited gold electrodes on silicon chips. These devices can be used to study the physical properties of the nanotubes and to investigate the electrical behaviour of the contacts between the electrodes and the tubes. From the experience with these devices technologies of chemical self-assembly can be developed which will allow for integration densities higher than achievable by purely lithographic means.
Bibliographical noteFunding Information:
This work was supported by KISTEP under the contract No. 98-I-01-04-A-026, Ministry of Science and Technology (MOST), Korea. M. B. is grateful to the Deutsche Forschungsgemeinschaft (DFG) for financial support.
- Carbon nanotube
- Field-effect transistor
- Molecular electronics
- Quantum transport
ASJC Scopus subject areas
- General Materials Science
- General Physics and Astronomy