Quantum transport in molecular nanowires transistors

Siegmar Roth; Marko Burghard; Vojislav Krstic; Kun Liu; Joerg Muster; Günther Philipp; Gyu Tae Kim; Jin Gyu Park; Yung Woo Park

doi:10.1016/S1567-1739(00)00011-0

Quantum transport in molecular nanowires transistors

Siegmar Roth, Marko Burghard, Vojislav Krstic, Kun Liu, Joerg Muster, Günther Philipp, Gyu Tae Kim, Jin Gyu Park, Yung Woo Park

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Nanotube-based field effect transistors can be prepared by laying carbon nanotubes over electrolithographically deposited gold electrodes on silicon chips. These devices can be used to study the physical properties of the nanotubes and to investigate the electrical behaviour of the contacts between the electrodes and the tubes. From the experience with these devices technologies of chemical self-assembly can be developed which will allow for integration densities higher than achievable by purely lithographic means.

Original language	English
Pages (from-to)	56-60
Number of pages	5
Journal	Current Applied Physics
Volume	1
Issue number	1
DOIs	https://doi.org/10.1016/S1567-1739(00)00011-0
Publication status	Published - 2001 Jan

Bibliographical note

Funding Information:
This work was supported by KISTEP under the contract No. 98-I-01-04-A-026, Ministry of Science and Technology (MOST), Korea. M. B. is grateful to the Deutsche Forschungsgemeinschaft (DFG) for financial support.

Keywords

73.22.-f
73.63.Fg
85.35.Kt
Carbon nanotube
Field-effect transistor
Molecular electronics
Quantum transport
Self-assembly

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

Access to Document

10.1016/S1567-1739(00)00011-0

Cite this

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title = "Quantum transport in molecular nanowires transistors",

abstract = "Nanotube-based field effect transistors can be prepared by laying carbon nanotubes over electrolithographically deposited gold electrodes on silicon chips. These devices can be used to study the physical properties of the nanotubes and to investigate the electrical behaviour of the contacts between the electrodes and the tubes. From the experience with these devices technologies of chemical self-assembly can be developed which will allow for integration densities higher than achievable by purely lithographic means.",

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note = "Funding Information: This work was supported by KISTEP under the contract No. 98-I-01-04-A-026, Ministry of Science and Technology (MOST), Korea. M. B. is grateful to the Deutsche Forschungsgemeinschaft (DFG) for financial support.",

year = "2001",

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doi = "10.1016/S1567-1739(00)00011-0",

language = "English",

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AU - Roth, Siegmar

AU - Burghard, Marko

AU - Krstic, Vojislav

AU - Liu, Kun

AU - Muster, Joerg

AU - Philipp, Günther

AU - Tae Kim, Gyu

AU - Gyu Park, Jin

AU - Woo Park, Yung

N1 - Funding Information: This work was supported by KISTEP under the contract No. 98-I-01-04-A-026, Ministry of Science and Technology (MOST), Korea. M. B. is grateful to the Deutsche Forschungsgemeinschaft (DFG) for financial support.

PY - 2001/1

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N2 - Nanotube-based field effect transistors can be prepared by laying carbon nanotubes over electrolithographically deposited gold electrodes on silicon chips. These devices can be used to study the physical properties of the nanotubes and to investigate the electrical behaviour of the contacts between the electrodes and the tubes. From the experience with these devices technologies of chemical self-assembly can be developed which will allow for integration densities higher than achievable by purely lithographic means.

AB - Nanotube-based field effect transistors can be prepared by laying carbon nanotubes over electrolithographically deposited gold electrodes on silicon chips. These devices can be used to study the physical properties of the nanotubes and to investigate the electrical behaviour of the contacts between the electrodes and the tubes. From the experience with these devices technologies of chemical self-assembly can be developed which will allow for integration densities higher than achievable by purely lithographic means.

KW - 73.22.-f

KW - 73.63.Fg

KW - 85.35.Kt

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Quantum transport in molecular nanowires transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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