Quantum wells due to ordering in GaInP

Y. Hsu; G. B. Stringfellow; C. E. Inglefield; M. C. DeLong; P. C. Taylor; J. H. Cho; T. Y. Seong

doi:10.1063/1.122931

Quantum wells due to ordering in GaInP

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, T. Y. Seong

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

CuPt ordering results in a reduction of the band-gap energy of GaInP. Thus, heterostructures and quantum wells can be produced by simply varying the order parameter, without changing the solid composition. Changes in the order parameter can be induced by changes in growth conditions. The disordered/ordered/disordered quantum wells described here are grown by changing the PH₃ flow rate. Transmission electron microscopy results show that the quantum wells produced in this way are clearly defined, with abrupt interfaces. Low-temperature photoluminescence spectra show distinct peaks from quantum wells (QWs) of different widths. The QW photoluminescence peak energy increases with decreasing well width due to quantum size effects. The difference in band-gap energy between the ordered and disordered single layers is determined from photoluminescence excitation spectroscopy to be 0.06 eV.

Original language	English
Pages (from-to)	3905-3907
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	26
DOIs	https://doi.org/10.1063/1.122931
Publication status	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.122931

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title = "Quantum wells due to ordering in GaInP",

abstract = "CuPt ordering results in a reduction of the band-gap energy of GaInP. Thus, heterostructures and quantum wells can be produced by simply varying the order parameter, without changing the solid composition. Changes in the order parameter can be induced by changes in growth conditions. The disordered/ordered/disordered quantum wells described here are grown by changing the PH3 flow rate. Transmission electron microscopy results show that the quantum wells produced in this way are clearly defined, with abrupt interfaces. Low-temperature photoluminescence spectra show distinct peaks from quantum wells (QWs) of different widths. The QW photoluminescence peak energy increases with decreasing well width due to quantum size effects. The difference in band-gap energy between the ordered and disordered single layers is determined from photoluminescence excitation spectroscopy to be 0.06 eV.",

author = "Y. Hsu and Stringfellow, {G. B.} and Inglefield, {C. E.} and DeLong, {M. C.} and Taylor, {P. C.} and Cho, {J. H.} and Seong, {T. Y.}",

year = "1998",

doi = "10.1063/1.122931",

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volume = "73",

pages = "3905--3907",

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TY - JOUR

T1 - Quantum wells due to ordering in GaInP

AU - Hsu, Y.

AU - Stringfellow, G. B.

AU - Inglefield, C. E.

AU - DeLong, M. C.

AU - Taylor, P. C.

AU - Cho, J. H.

AU - Seong, T. Y.

PY - 1998

Y1 - 1998

N2 - CuPt ordering results in a reduction of the band-gap energy of GaInP. Thus, heterostructures and quantum wells can be produced by simply varying the order parameter, without changing the solid composition. Changes in the order parameter can be induced by changes in growth conditions. The disordered/ordered/disordered quantum wells described here are grown by changing the PH3 flow rate. Transmission electron microscopy results show that the quantum wells produced in this way are clearly defined, with abrupt interfaces. Low-temperature photoluminescence spectra show distinct peaks from quantum wells (QWs) of different widths. The QW photoluminescence peak energy increases with decreasing well width due to quantum size effects. The difference in band-gap energy between the ordered and disordered single layers is determined from photoluminescence excitation spectroscopy to be 0.06 eV.

AB - CuPt ordering results in a reduction of the band-gap energy of GaInP. Thus, heterostructures and quantum wells can be produced by simply varying the order parameter, without changing the solid composition. Changes in the order parameter can be induced by changes in growth conditions. The disordered/ordered/disordered quantum wells described here are grown by changing the PH3 flow rate. Transmission electron microscopy results show that the quantum wells produced in this way are clearly defined, with abrupt interfaces. Low-temperature photoluminescence spectra show distinct peaks from quantum wells (QWs) of different widths. The QW photoluminescence peak energy increases with decreasing well width due to quantum size effects. The difference in band-gap energy between the ordered and disordered single layers is determined from photoluminescence excitation spectroscopy to be 0.06 eV.

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U2 - 10.1063/1.122931

DO - 10.1063/1.122931

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JO - Applied Physics Letters

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Quantum wells due to ordering in GaInP

Abstract

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