Quasi-optical power-combining arrays

David B. Rutledge, Zoya Basta Popovic, Robert M. Weikle, Moonil Kim, Kent A. Potter, Richard C. Compton, Robert A. York

Research output: Contribution to journalConference articlepeer-review

39 Citations (Scopus)


Semiconductor devices have limited power handling capabilities at high frequencies, particularly at millimeter-wave frequencies. A method is presented for overcoming this problem by combining the outputs of several devices quasi-optically in a resonator cavity. This method has been applied to a number of solid-state devices, including Gunn diodes and MESFETs. The devices do not require an external locking signal because they lock to a mode of the resonator cavity. Effective radiated powers of 22 W for a 4 × 4 array of Gunn diodes and 25 W for a 10 × 10 array of MESFETs have been achieved.

Original languageEnglish
Pages (from-to)1201-1204
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 1990
Event1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) - Dallas, TX, USA
Duration: 2010 May 82010 May 10

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Quasi-optical power-combining arrays'. Together they form a unique fingerprint.

Cite this