Quasi-optical power-combining arrays

David B. Rutledge; Zoya Basta Popovic; Robert M. Weikle; Moonil Kim; Kent A. Potter; Richard C. Compton; Robert A. York

Quasi-optical power-combining arrays

David B. Rutledge^*
, Zoya Basta Popovic
, Robert M. Weikle
, Moonil Kim
, Kent A. Potter
, Richard C. Compton
, Robert A. York

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

39 Citations (Scopus)

Abstract

Semiconductor devices have limited power handling capabilities at high frequencies, particularly at millimeter-wave frequencies. A method is presented for overcoming this problem by combining the outputs of several devices quasi-optically in a resonator cavity. This method has been applied to a number of solid-state devices, including Gunn diodes and MESFETs. The devices do not require an external locking signal because they lock to a mode of the resonator cavity. Effective radiated powers of 22 W for a 4 × 4 array of Gunn diodes and 25 W for a 10 × 10 array of MESFETs have been achieved.

Original language	English
Pages (from-to)	1201-1204
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
Publication status	Published - 1990
Externally published	Yes
Event	1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) - Dallas, TX, USA Duration: 2010 May 8 → 2010 May 10

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{f24dcfc302fb4da69cbe5f8fb17b7f45,

title = "Quasi-optical power-combining arrays",

abstract = "Semiconductor devices have limited power handling capabilities at high frequencies, particularly at millimeter-wave frequencies. A method is presented for overcoming this problem by combining the outputs of several devices quasi-optically in a resonator cavity. This method has been applied to a number of solid-state devices, including Gunn diodes and MESFETs. The devices do not require an external locking signal because they lock to a mode of the resonator cavity. Effective radiated powers of 22 W for a 4 × 4 array of Gunn diodes and 25 W for a 10 × 10 array of MESFETs have been achieved.",

author = "Rutledge, \{David B.\} and Popovic, \{Zoya Basta\} and Weikle, \{Robert M.\} and Moonil Kim and Potter, \{Kent A.\} and Compton, \{Richard C.\} and York, \{Robert A.\}",

year = "1990",

language = "English",

volume = "3",

pages = "1201--1204",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) ; Conference date: 08-05-2010 Through 10-05-2010",

}

TY - JOUR

T1 - Quasi-optical power-combining arrays

AU - Rutledge, David B.

AU - Popovic, Zoya Basta

AU - Weikle, Robert M.

AU - Kim, Moonil

AU - Potter, Kent A.

AU - Compton, Richard C.

AU - York, Robert A.

PY - 1990

Y1 - 1990

N2 - Semiconductor devices have limited power handling capabilities at high frequencies, particularly at millimeter-wave frequencies. A method is presented for overcoming this problem by combining the outputs of several devices quasi-optically in a resonator cavity. This method has been applied to a number of solid-state devices, including Gunn diodes and MESFETs. The devices do not require an external locking signal because they lock to a mode of the resonator cavity. Effective radiated powers of 22 W for a 4 × 4 array of Gunn diodes and 25 W for a 10 × 10 array of MESFETs have been achieved.

AB - Semiconductor devices have limited power handling capabilities at high frequencies, particularly at millimeter-wave frequencies. A method is presented for overcoming this problem by combining the outputs of several devices quasi-optically in a resonator cavity. This method has been applied to a number of solid-state devices, including Gunn diodes and MESFETs. The devices do not require an external locking signal because they lock to a mode of the resonator cavity. Effective radiated powers of 22 W for a 4 × 4 array of Gunn diodes and 25 W for a 10 × 10 array of MESFETs have been achieved.

UR - https://www.scopus.com/pages/publications/0024983207

UR - https://www.scopus.com/pages/publications/0024983207#tab=citedBy

M3 - Conference article

AN - SCOPUS:0024983207

SN - 0149-645X

VL - 3

SP - 1201

EP - 1204

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3)

Y2 - 8 May 2010 through 10 May 2010

ER -

Quasi-optical power-combining arrays

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this