Quintuple layer Bi                         2                         Se                         3                          thin films directly grown on insulating SiO                         2                          using molecular beam epitaxy

Jeong Heum Jeon; Misun Song; Howon Kim; Won Jun Jang; Ji Yong Park; Seokhyun Yoon; Se Jong Kahng

doi:10.1016/j.apsusc.2014.07.106

Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy

Jeong Heum Jeon, Misun Song, Howon Kim, Won Jun Jang, Ji Yong Park, Seokhyun Yoon, Se Jong Kahng

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Topological insulator thin films on insulating SiO ₂ can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi ₂ Se ₃ on insulating SiO ₂ using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi ₂ Se ₃ quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi ₂ Se ₃ can be directly prepared on non-crystalline insulator SiO ₂ .

Original language	English
Pages (from-to)	42-45
Number of pages	4
Journal	Applied Surface Science
Volume	316
Issue number	1
DOIs	https://doi.org/10.1016/j.apsusc.2014.07.106
Publication status	Published - 2014

Keywords

Bismuth selenide
Molecular beam epitaxy
Topological insulator

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2014.07.106

Cite this

Jeon, J. H., Song, M., Kim, H., Jang, W. J., Park, J. Y., Yoon, S., & Kahng, S. J. (2014). Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy Applied Surface Science, 316(1), 42-45. https://doi.org/10.1016/j.apsusc.2014.07.106

Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy . / Jeon, Jeong Heum; Song, Misun; Kim, Howon et al.
In: Applied Surface Science, Vol. 316, No. 1, 2014, p. 42-45.

Research output: Contribution to journal › Article › peer-review

Jeon, JH, Song, M, Kim, H, Jang, WJ, Park, JY, Yoon, S & Kahng, SJ 2014, ' Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy ', Applied Surface Science, vol. 316, no. 1, pp. 42-45. https://doi.org/10.1016/j.apsusc.2014.07.106

Jeon JH, Song M, Kim H, Jang WJ, Park JY, Yoon S et al. Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy Applied Surface Science. 2014;316(1):42-45. doi: 10.1016/j.apsusc.2014.07.106

Jeon, Jeong Heum ; Song, Misun ; Kim, Howon et al. / Quintuple layer Bi ₂ Se ₃ thin films directly grown on insulating SiO ₂ using molecular beam epitaxy In: Applied Surface Science. 2014 ; Vol. 316, No. 1. pp. 42-45.

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title = " Quintuple layer Bi 2 Se 3 thin films directly grown on insulating SiO 2 using molecular beam epitaxy ",

abstract = " Topological insulator thin films on insulating SiO 2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi 2 Se 3 on insulating SiO 2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi 2 Se 3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi 2 Se 3 can be directly prepared on non-crystalline insulator SiO 2 . ",

keywords = "Bismuth selenide, Molecular beam epitaxy, Topological insulator",

author = "Jeon, {Jeong Heum} and Misun Song and Howon Kim and Jang, {Won Jun} and Park, {Ji Yong} and Seokhyun Yoon and Kahng, {Se Jong}",

note = "Funding Information: The authors gratefully acknowledge financial support from National Research Foundation of Korea, and from the Ministry of Education Science and Technology of the Korean government (Grant nos. 2008-0062237; 2010-0025301 ; 2012-0013222 ; 2012R1A1A20394080). JYP was also supported from Priority Research Centers Program (2011-0030745). Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

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AU - Jeon, Jeong Heum

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AU - Kim, Howon

AU - Jang, Won Jun

AU - Park, Ji Yong

AU - Yoon, Seokhyun

AU - Kahng, Se Jong

N1 - Funding Information: The authors gratefully acknowledge financial support from National Research Foundation of Korea, and from the Ministry of Education Science and Technology of the Korean government (Grant nos. 2008-0062237; 2010-0025301 ; 2012-0013222 ; 2012R1A1A20394080). JYP was also supported from Priority Research Centers Program (2011-0030745). Publisher Copyright: © 2014 Elsevier B.V. All rights reserved.

PY - 2014

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N2 - Topological insulator thin films on insulating SiO 2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi 2 Se 3 on insulating SiO 2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi 2 Se 3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi 2 Se 3 can be directly prepared on non-crystalline insulator SiO 2 .

AB - Topological insulator thin films on insulating SiO 2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi 2 Se 3 on insulating SiO 2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi 2 Se 3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi 2 Se 3 can be directly prepared on non-crystalline insulator SiO 2 .

KW - Bismuth selenide

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