Radiation and process-induced damage in Ga2O3

S. J. Pearton; Jiancheng Yang; F. Ren; G. Yang; Jihyun Kim; M. Stavola; A. Kuramata

doi:10.1117/12.2284486

Radiation and process-induced damage in Ga₂O₃

S. J. Pearton, Jiancheng Yang, F. Ren, G. Yang, Jihyun Kim, M. Stavola, A. Kuramata

Department of Chemical and Biological Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Ga₂O₃ is gaining attention for high breakdown electronics. The β-polymorph is air-stable, has a wide bandgap (∼4.6 eV) and is available in both bulk and epitaxial form. Different types of power diodes and transistors fabricated on Ga₂O₃ have shown impressive performance. Etching processes for Ga₂O₃ are needed for patterning for mesa isolation, threshold adjustment in transistors, thinning of nano-belts and selective area contact formation. Electrical damage in the near-surface region was found through barrier height changes of Schottky diodes on the etched surface. The damage is created by energetic ion bombardment, but may also consist of changes to near-surface stoichiometry through loss of lattice elements or deposition of etch residues. Annealing at 450°C removes this damage. We also discuss recent results on damage introduction by proton and electron irradiation. In this case, the carrier removal rates are found to be similar to those reported for GaN under similar conditions of dose and energy of the radiation.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices XIII
Editors	Hiroshi Fujioka, Hadis Morkoc, Jen-Inn Chyi
Publisher	SPIE
ISBN (Electronic)	9781510615496
DOIs	https://doi.org/10.1117/12.2284486
Publication status	Published - 2018
Event	Gallium Nitride Materials and Devices XIII 2018 - San Francisco, United States Duration: 2018 Jan 29 → 2018 Feb 1

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10532
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Gallium Nitride Materials and Devices XIII 2018
Country/Territory	United States
City	San Francisco
Period	18/1/29 → 18/2/1

Keywords

GaO
Schottky barriers
annealing
dry etch damage
electron damage
proton damage
radiation damage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2284486

Cite this

Radiation and process-induced damage in Ga₂O₃. / Pearton, S. J.; Yang, Jiancheng; Ren, F. et al.
Gallium Nitride Materials and Devices XIII. ed. / Hiroshi Fujioka; Hadis Morkoc; Jen-Inn Chyi. SPIE, 2018. 105320K (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10532).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Pearton, SJ, Yang, J, Ren, F, Yang, G, Kim, J, Stavola, M & Kuramata, A 2018, Radiation and process-induced damage in Ga₂O₃. in H Fujioka, H Morkoc & J-I Chyi (eds), Gallium Nitride Materials and Devices XIII., 105320K, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10532, SPIE, Gallium Nitride Materials and Devices XIII 2018, San Francisco, United States, 18/1/29. https://doi.org/10.1117/12.2284486

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abstract = "Ga2O3 is gaining attention for high breakdown electronics. The β-polymorph is air-stable, has a wide bandgap (∼4.6 eV) and is available in both bulk and epitaxial form. Different types of power diodes and transistors fabricated on Ga2O3 have shown impressive performance. Etching processes for Ga2O3 are needed for patterning for mesa isolation, threshold adjustment in transistors, thinning of nano-belts and selective area contact formation. Electrical damage in the near-surface region was found through barrier height changes of Schottky diodes on the etched surface. The damage is created by energetic ion bombardment, but may also consist of changes to near-surface stoichiometry through loss of lattice elements or deposition of etch residues. Annealing at 450°C removes this damage. We also discuss recent results on damage introduction by proton and electron irradiation. In this case, the carrier removal rates are found to be similar to those reported for GaN under similar conditions of dose and energy of the radiation.",

keywords = "GaO, Schottky barriers, annealing, dry etch damage, electron damage, proton damage, radiation damage",

author = "Pearton, {S. J.} and Jiancheng Yang and F. Ren and G. Yang and Jihyun Kim and M. Stavola and A. Kuramata",

note = "Funding Information: The project or effort depicted was also sponsored by the Department of the Defense Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP), the Ministry of Trade, Industry, and Energy of Korea (No. 20172010104830), and the Space Core Technology Development Program (2017M1A3A3A02015033) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea. The work at Lehigh University was supported by NSF Grant No. DMR 1160756. Part of the work at Tamura was supported by {"}The research and development project for innovation technique of energy conservation{"} of the New Energy and Industrial Technology Development Organization (NEDO), Japan. We also thank Dr. Kohei Sasaki from Tamura Corporation for fruitful discussions. Publisher Copyright: {\textcopyright} 2018 SPIE.; Gallium Nitride Materials and Devices XIII 2018 ; Conference date: 29-01-2018 Through 01-02-2018",

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AU - Stavola, M.

AU - Kuramata, A.

N1 - Funding Information: The project or effort depicted was also sponsored by the Department of the Defense Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP), the Ministry of Trade, Industry, and Energy of Korea (No. 20172010104830), and the Space Core Technology Development Program (2017M1A3A3A02015033) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea. The work at Lehigh University was supported by NSF Grant No. DMR 1160756. Part of the work at Tamura was supported by "The research and development project for innovation technique of energy conservation" of the New Energy and Industrial Technology Development Organization (NEDO), Japan. We also thank Dr. Kohei Sasaki from Tamura Corporation for fruitful discussions. Publisher Copyright: © 2018 SPIE.

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N2 - Ga2O3 is gaining attention for high breakdown electronics. The β-polymorph is air-stable, has a wide bandgap (∼4.6 eV) and is available in both bulk and epitaxial form. Different types of power diodes and transistors fabricated on Ga2O3 have shown impressive performance. Etching processes for Ga2O3 are needed for patterning for mesa isolation, threshold adjustment in transistors, thinning of nano-belts and selective area contact formation. Electrical damage in the near-surface region was found through barrier height changes of Schottky diodes on the etched surface. The damage is created by energetic ion bombardment, but may also consist of changes to near-surface stoichiometry through loss of lattice elements or deposition of etch residues. Annealing at 450°C removes this damage. We also discuss recent results on damage introduction by proton and electron irradiation. In this case, the carrier removal rates are found to be similar to those reported for GaN under similar conditions of dose and energy of the radiation.

AB - Ga2O3 is gaining attention for high breakdown electronics. The β-polymorph is air-stable, has a wide bandgap (∼4.6 eV) and is available in both bulk and epitaxial form. Different types of power diodes and transistors fabricated on Ga2O3 have shown impressive performance. Etching processes for Ga2O3 are needed for patterning for mesa isolation, threshold adjustment in transistors, thinning of nano-belts and selective area contact formation. Electrical damage in the near-surface region was found through barrier height changes of Schottky diodes on the etched surface. The damage is created by energetic ion bombardment, but may also consist of changes to near-surface stoichiometry through loss of lattice elements or deposition of etch residues. Annealing at 450°C removes this damage. We also discuss recent results on damage introduction by proton and electron irradiation. In this case, the carrier removal rates are found to be similar to those reported for GaN under similar conditions of dose and energy of the radiation.

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