Radiation and process-induced damage in Ga2O3

S. J. Pearton, Jiancheng Yang, F. Ren, G. Yang, Jihyun Kim, M. Stavola, A. Kuramata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ga2O3 is gaining attention for high breakdown electronics. The β-polymorph is air-stable, has a wide bandgap (∼4.6 eV) and is available in both bulk and epitaxial form. Different types of power diodes and transistors fabricated on Ga2O3 have shown impressive performance. Etching processes for Ga2O3 are needed for patterning for mesa isolation, threshold adjustment in transistors, thinning of nano-belts and selective area contact formation. Electrical damage in the near-surface region was found through barrier height changes of Schottky diodes on the etched surface. The damage is created by energetic ion bombardment, but may also consist of changes to near-surface stoichiometry through loss of lattice elements or deposition of etch residues. Annealing at 450°C removes this damage. We also discuss recent results on damage introduction by proton and electron irradiation. In this case, the carrier removal rates are found to be similar to those reported for GaN under similar conditions of dose and energy of the radiation.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices XIII
EditorsHiroshi Fujioka, Hadis Morkoc, Jen-Inn Chyi
PublisherSPIE
ISBN (Electronic)9781510615496
DOIs
Publication statusPublished - 2018
EventGallium Nitride Materials and Devices XIII 2018 - San Francisco, United States
Duration: 2018 Jan 292018 Feb 1

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10532
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherGallium Nitride Materials and Devices XIII 2018
Country/TerritoryUnited States
CitySan Francisco
Period18/1/2918/2/1

Bibliographical note

Funding Information:
The project or effort depicted was also sponsored by the Department of the Defense Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP), the Ministry of Trade, Industry, and Energy of Korea (No. 20172010104830), and the Space Core Technology Development Program (2017M1A3A3A02015033) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea. The work at Lehigh University was supported by NSF Grant No. DMR 1160756. Part of the work at Tamura was supported by "The research and development project for innovation technique of energy conservation" of the New Energy and Industrial Technology Development Organization (NEDO), Japan. We also thank Dr. Kohei Sasaki from Tamura Corporation for fruitful discussions.

Publisher Copyright:
© 2018 SPIE.

Keywords

  • GaO
  • Schottky barriers
  • annealing
  • dry etch damage
  • electron damage
  • proton damage
  • radiation damage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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