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Radiation and process-induced damage in Ga
2
O
3
S. J. Pearton
, Jiancheng Yang
, F. Ren
, G. Yang
, Jihyun Kim
, M. Stavola
, A. Kuramata
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
2
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Citations (Scopus)
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2
O
3
'. Together they form a unique fingerprint.
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Engineering
Energy Engineering
100%
Etching Process
100%
Barrier Height
100%
Surface Region
100%
Induced Damage
100%
Contact Area
100%
Belts
100%
Removal Rate
100%
Ion Implantation
100%
Energetic Ion
100%
Band Gap
100%
Reaction Stoichiometry
100%
Keyphrases
Ga2O3
100%
Induced Damage
100%
Annealing
25%
Air-stable
25%
Epitaxial
25%
Transistor
25%
Schottky Diode
25%
Barrier Height
25%
Nanobelts
25%
Etching Process
25%
Power Types
25%
Contact Formation
25%
Etched Surface
25%
Electron Beam Irradiation
25%
Wide Bandgap
25%
Proton Irradiation
25%
Selective-area
25%
Carrier Removal
25%
Surface Stoichiometry
25%
Polymorph
25%
Ion Bombardment
25%
Power Transistors
25%
Near-surface Region
25%
Energetic Ions
25%
Height Change
25%
Electrical Injury
25%
Mesa Isolation
25%
Power Diode
25%
Threshold Adjustment
25%
High Breakdown
25%
Material Science
Surface (Surface Science)
100%
Transistor
66%
Electron Irradiation
33%
Schottky Diode
33%
Contact Area
33%
Ion Bombardment
33%
Polymorphism
33%
Earth and Planetary Sciences
Electron Irradiation
50%