Skip to main navigation
Skip to search
Skip to main content
Korea University Pure Home
Search content at Korea University Pure
Home
Profiles
Research units
Equipment
Research output
Press/Media
Radiation damage in GaN-based materials and devices
Erin Patrick
, Mark E. Law
, S. J. Pearton
, Richard Deist
, Fan Ren
, Lu Liu
, A. Y. Polyakov
, Jihyun Kim
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
4
Link opens in a new tab
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Radiation damage in GaN-based materials and devices'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Radiation Damage
100%
GaN Material
100%
GaN-based Devices
100%
Heterostructure
33%
Neutron Irradiation
33%
Neutron
33%
Gallium Arsenide
33%
Proton
33%
AlGaN-GaN
33%
Device Performance
33%
High Electron Mobility Transistor
33%
Drain Current
33%
Order of Magnitude
33%
GaN-based
33%
Breakdown Voltage
33%
Radiation Hardness
33%
Electron Beam Irradiation
33%
InAlN
33%
Disordered Regions
33%
Damage Region
33%
Carrier Trapping
33%
GaN Devices
33%
Doping Concentration
33%
Al-based
33%
Average Bond Stress
33%
Negative Charge
33%
Electric Field Profile
33%
Radiation Type
33%
Field Drains
33%
Engineering
Radiation Effect
100%
Good Agreement
33%
Heterostructures
33%
Gallium Arsenide
33%
Current Drain
33%
Device Performance
33%
Bond Strength
33%
Negative Charge
33%
Breakdown Voltage
33%
Current Profile
33%
Show Effect
33%
Radiation Type
33%
Electric Field
33%
Material Science
Radiation Damage
100%
Heterojunction
33%
Neutron Irradiation
33%
Electron Mobility
33%
Transistor
33%
Gallium Arsenide
33%
Aluminum Nitride
33%
Electron Irradiation
33%
Point Defect
33%
Physics
Radiation Effect
100%
High Electron Mobility Transistors
33%
Neutron Irradiation
33%
Point Defect
33%
Electric Field
33%
Electron Irradiation
33%