A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10nm/s. The results assuming the REDG for prismatic plane dislocations were presented.
Bibliographical noteFunding Information:
The work was partially supported by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST "MISiS" (No. K2-2014-055) and by the Russian Foundation for Basic Research (Grant No. 14-29-04056).
© 2016 The Japan Society of Applied Physics.
ASJC Scopus subject areas
- Physics and Astronomy(all)