Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation

M. D. Chun; D. Kim; J. Y. Huh

doi:10.1063/1.1615303

Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation

M. D. Chun, D. Kim, J. Y. Huh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×10¹⁵ cm^-2.

Original language	English
Pages (from-to)	5617-5622
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.1615303
Publication status	Published - 2003 Nov 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1615303

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abstract = "A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×1015 cm-2.",

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AU - Chun, M. D.

AU - Kim, D.

AU - Huh, J. Y.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×1015 cm-2.

AB - A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×1015 cm-2.

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JF - Journal of Applied Physics

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ER -

Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation

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