Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation

M. D. Chun; D. Kim; J. Y. Huh

doi:10.1063/1.1615303

Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation

M. D. Chun, D. Kim, J. Y. Huh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×10¹⁵ cm^-2.

Original language	English
Pages (from-to)	5617-5622
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.1615303
Publication status	Published - 2003 Nov 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1615303

Cite this

@article{05c416747e8c458db547e63b0f992048,

title = "Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation",

abstract = "A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×1015 cm-2.",

author = "Chun, {M. D.} and D. Kim and Huh, {J. Y.}",

year = "2003",

month = nov,

day = "1",

doi = "10.1063/1.1615303",

language = "English",

volume = "94",

pages = "5617--5622",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation

AU - Chun, M. D.

AU - Kim, D.

AU - Huh, J. Y.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×1015 cm-2.

AB - A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×1015 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=0242468580&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242468580&partnerID=8YFLogxK

U2 - 10.1063/1.1615303

DO - 10.1063/1.1615303

M3 - Article

AN - SCOPUS:0242468580

SN - 0021-8979

VL - 94

SP - 5617

EP - 5622

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this