Radiation resistance of wide band gap n+/p AlInGaP solar cell for high-efficient multijunction space solar cells

Hae Seok Lee; Masafumi Yamaguchi; Nicholas J. Ekins-Daukes; Aurangzeb Khan; Tatsuya Takamoto; Mitsuru Imaizumi; Takeshi Ohshima; Hisayoshi Itoh

doi:10.1143/JJAP.46.L645

Radiation resistance of wide band gap n⁺/p AlInGaP solar cell for high-efficient multijunction space solar cells

Hae Seok Lee, Masafumi Yamaguchi, Nicholas J. Ekins-Daukes, Aurangzeb Khan, Tatsuya Takamoto, Mitsuru Imaizumi, Takeshi Ohshima, Hisayoshi Itoh

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effects of 30 keV proton irradiation on n⁺/p AlInGaP solar cells are presented here. As the proton fluence increases to more than 1 × 10¹⁰ cm^-2, the maximum power P_max of the cell decreases markedly due to the introduction of defects by proton irradiation. From the changes in minority-carrier diffusion length determined by quantum efficiency modeling as a function of fluence, the damage constant K_L for p-AlInGaP was estimated to be about 5.0 × 10^-5. This value is comparable to that observed from 3 MeV proton-irradiated p-InGaP whereas it is lower than that observed from 3 MeV proton-irradiated p-InGaAsP and p-InGaAs cells. The maximum power recovery of the cell was observed by minority-carrier-injection-enhanced annealing (1 A/cm²), and the annealing activation energy for 30 keV proton-irradiation-induced defects in p-AlInGaP was determined as ΔE = 0.42 eV.

Original language	English
Pages (from-to)	L645-L647
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	46
Issue number	25-28
DOIs	https://doi.org/10.1143/JJAP.46.L645
Publication status	Published - 2007 Jul 13
Externally published	Yes

Keywords

AlInGaP
Damage constant
Irradiation-induced defects
Proton irradiation
Solar cells

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.46.L645

Cite this

@article{73a84a1e2e414eaeb1e46d50a2428e82,

title = "Radiation resistance of wide band gap n+/p AlInGaP solar cell for high-efficient multijunction space solar cells",

abstract = "The effects of 30 keV proton irradiation on n+/p AlInGaP solar cells are presented here. As the proton fluence increases to more than 1 × 1010 cm-2, the maximum power Pmax of the cell decreases markedly due to the introduction of defects by proton irradiation. From the changes in minority-carrier diffusion length determined by quantum efficiency modeling as a function of fluence, the damage constant KL for p-AlInGaP was estimated to be about 5.0 × 10-5. This value is comparable to that observed from 3 MeV proton-irradiated p-InGaP whereas it is lower than that observed from 3 MeV proton-irradiated p-InGaAsP and p-InGaAs cells. The maximum power recovery of the cell was observed by minority-carrier-injection-enhanced annealing (1 A/cm2), and the annealing activation energy for 30 keV proton-irradiation-induced defects in p-AlInGaP was determined as ΔE = 0.42 eV.",

keywords = "AlInGaP, Damage constant, Irradiation-induced defects, Proton irradiation, Solar cells",

author = "Lee, {Hae Seok} and Masafumi Yamaguchi and Ekins-Daukes, {Nicholas J.} and Aurangzeb Khan and Tatsuya Takamoto and Mitsuru Imaizumi and Takeshi Ohshima and Hisayoshi Itoh",

year = "2007",

month = jul,

day = "13",

doi = "10.1143/JJAP.46.L645",

language = "English",

volume = "46",

pages = "L645--L647",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "25-28",

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TY - JOUR

T1 - Radiation resistance of wide band gap n+/p AlInGaP solar cell for high-efficient multijunction space solar cells

AU - Lee, Hae Seok

AU - Yamaguchi, Masafumi

AU - Ekins-Daukes, Nicholas J.

AU - Khan, Aurangzeb

AU - Takamoto, Tatsuya

AU - Imaizumi, Mitsuru

AU - Ohshima, Takeshi

AU - Itoh, Hisayoshi

PY - 2007/7/13

Y1 - 2007/7/13

N2 - The effects of 30 keV proton irradiation on n+/p AlInGaP solar cells are presented here. As the proton fluence increases to more than 1 × 1010 cm-2, the maximum power Pmax of the cell decreases markedly due to the introduction of defects by proton irradiation. From the changes in minority-carrier diffusion length determined by quantum efficiency modeling as a function of fluence, the damage constant KL for p-AlInGaP was estimated to be about 5.0 × 10-5. This value is comparable to that observed from 3 MeV proton-irradiated p-InGaP whereas it is lower than that observed from 3 MeV proton-irradiated p-InGaAsP and p-InGaAs cells. The maximum power recovery of the cell was observed by minority-carrier-injection-enhanced annealing (1 A/cm2), and the annealing activation energy for 30 keV proton-irradiation-induced defects in p-AlInGaP was determined as ΔE = 0.42 eV.

AB - The effects of 30 keV proton irradiation on n+/p AlInGaP solar cells are presented here. As the proton fluence increases to more than 1 × 1010 cm-2, the maximum power Pmax of the cell decreases markedly due to the introduction of defects by proton irradiation. From the changes in minority-carrier diffusion length determined by quantum efficiency modeling as a function of fluence, the damage constant KL for p-AlInGaP was estimated to be about 5.0 × 10-5. This value is comparable to that observed from 3 MeV proton-irradiated p-InGaP whereas it is lower than that observed from 3 MeV proton-irradiated p-InGaAsP and p-InGaAs cells. The maximum power recovery of the cell was observed by minority-carrier-injection-enhanced annealing (1 A/cm2), and the annealing activation energy for 30 keV proton-irradiation-induced defects in p-AlInGaP was determined as ΔE = 0.42 eV.

KW - AlInGaP

KW - Damage constant

KW - Irradiation-induced defects

KW - Proton irradiation

KW - Solar cells

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