Radiation response analysis of wide-gap p-AllnGaP for superhigh-efficiency space photovoltaics

Aurangzeb Khan, S. Marupaduga, S. S. Anandakrishnan, M. Alam, N. J. Ekins-Daukes, H. S. Lee, T. Sasaki, M. Yamaguchi, T. Takamoto, T. Agui, K. Kamimura, M. Kaneiwa, M. Imazumi

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16 Citations (Scopus)


We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04 eV) and thick (2μm) p-AllnGaP diodes and solar cells structures before and after 1 MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (E V+0.37±0.05 eV) and two electron-emitting traps, El (E C -0.22±0.04 eV) and E3 (E C-0.78±0.05 eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.

Original languageEnglish
Article number3
Pages (from-to)5218-5220
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2004 Nov 29
Externally publishedYes

Bibliographical note

Funding Information:
This work has been supported by University of South Alabama Research Council, and the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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