Radiation response analysis of wide-gap p-AllnGaP for superhigh-efficiency space photovoltaics

Aurangzeb Khan; S. Marupaduga; S. S. Anandakrishnan; M. Alam; N. J. Ekins-Daukes; H. S. Lee; T. Sasaki; M. Yamaguchi; T. Takamoto; T. Agui; K. Kamimura; M. Kaneiwa; M. Imazumi

doi:10.1063/1.1829136

Radiation response analysis of wide-gap p-AllnGaP for superhigh-efficiency space photovoltaics

Aurangzeb Khan, S. Marupaduga, S. S. Anandakrishnan, M. Alam, N. J. Ekins-Daukes, H. S. Lee, T. Sasaki, M. Yamaguchi, T. Takamoto, T. Agui, K. Kamimura, M. Kaneiwa, M. Imazumi

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16 Citations (Scopus)

Abstract

We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04 eV) and thick (2μm) p-AllnGaP diodes and solar cells structures before and after 1 MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (E _V+0.37±0.05 eV) and two electron-emitting traps, El (E _C -0.22±0.04 eV) and E3 (E _C-0.78±0.05 eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.

Original language	English
Article number	3
Pages (from-to)	5218-5220
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	22
DOIs	https://doi.org/10.1063/1.1829136
Publication status	Published - 2004 Nov 29
Externally published	Yes

Bibliographical note

Funding Information:
This work has been supported by University of South Alabama Research Council, and the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1829136

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Khan, A., Marupaduga, S., Anandakrishnan, S. S., Alam, M., Ekins-Daukes, N. J., Lee, H. S., Sasaki, T., Yamaguchi, M., Takamoto, T., Agui, T., Kamimura, K., Kaneiwa, M., & Imazumi, M. (2004). Radiation response analysis of wide-gap p-AllnGaP for superhigh-efficiency space photovoltaics. Applied Physics Letters, 85(22), 5218-5220. Article 3. https://doi.org/10.1063/1.1829136

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title = "Radiation response analysis of wide-gap p-AllnGaP for superhigh-efficiency space photovoltaics",

abstract = "We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04 eV) and thick (2μm) p-AllnGaP diodes and solar cells structures before and after 1 MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (E V+0.37±0.05 eV) and two electron-emitting traps, El (E C -0.22±0.04 eV) and E3 (E C-0.78±0.05 eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.",

author = "Aurangzeb Khan and S. Marupaduga and Anandakrishnan, {S. S.} and M. Alam and Ekins-Daukes, {N. J.} and Lee, {H. S.} and T. Sasaki and M. Yamaguchi and T. Takamoto and T. Agui and K. Kamimura and M. Kaneiwa and M. Imazumi",

note = "Funding Information: This work has been supported by University of South Alabama Research Council, and the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.",

year = "2004",

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doi = "10.1063/1.1829136",

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T1 - Radiation response analysis of wide-gap p-AllnGaP for superhigh-efficiency space photovoltaics

AU - Khan, Aurangzeb

AU - Marupaduga, S.

AU - Anandakrishnan, S. S.

AU - Alam, M.

AU - Ekins-Daukes, N. J.

AU - Lee, H. S.

AU - Sasaki, T.

AU - Yamaguchi, M.

AU - Takamoto, T.

AU - Agui, T.

AU - Kamimura, K.

AU - Kaneiwa, M.

AU - Imazumi, M.

N1 - Funding Information: This work has been supported by University of South Alabama Research Council, and the Ministry of Education Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program in Japan.

PY - 2004/11/29

Y1 - 2004/11/29

N2 - We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04 eV) and thick (2μm) p-AllnGaP diodes and solar cells structures before and after 1 MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (E V+0.37±0.05 eV) and two electron-emitting traps, El (E C -0.22±0.04 eV) and E3 (E C-0.78±0.05 eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.

AB - We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04 eV) and thick (2μm) p-AllnGaP diodes and solar cells structures before and after 1 MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (E V+0.37±0.05 eV) and two electron-emitting traps, El (E C -0.22±0.04 eV) and E3 (E C-0.78±0.05 eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.

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Radiation response analysis of wide-gap p-AllnGaP for superhigh-efficiency space photovoltaics

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