Radiation response analysis of wide-gap p-AllnGaP for superhigh-efficiency space photovoltaics

Keyphrases

• Response Spectrum Analysis 100%
• Deep Level Transient Spectroscopy 100%
• Wide Gap 100%
• Radiation Response 100%
• Space Photovoltaics 100%
• Diode 50%
• Light-emitting Diodes 50%
• Gallium Arsenide 50%
• Temperature Range 50%
• Radiation Environment 50%
• Two-electron 50%
• Electron Beam Irradiation 50%
• Wide Bandgap 50%
• Solar Cell Architecture 50%
• InGaAsP 50%
• Radiation Defects 50%
• Defect Generation 50%
• Annealing Characteristics 50%
• Majority Carriers 50%
• Minority Carriers 50%
• MeV Electrons 50%
• InGaP 50%
• Annealing Studies 50%
• Multijunction Solar Cells 50%
• Phosphide 50%
• AlInGaP 50%
• Minority Carrier Injection 50%
• Annealing Property 50%

Engineering

• Photovoltaics 100%
• Deep Level 100%
• Transients 100%
• Minority Carriers 100%
• Light-Emitting Diode 50%
• Gallium Arsenide 50%
• Temperature Range 50%
• Induced Defect 50%
• Optoelectronic Device 50%
• Direct Observation 50%
• Multijunction Solar Cell 50%
• Solar Cell 50%
• Band Gap 50%

Material Science

• Photovoltaics 100%
• Solar Cell 100%
• Deep-Level Transient Spectroscopy 100%
• Light-Emitting Diode 50%
• Gallium Arsenide 50%
• Electron Irradiation 50%