Abstract
We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at (Formula presented) as well as an interface phonon at (Formula presented) We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.
| Original language | English |
|---|---|
| Pages (from-to) | 15641-15644 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 61 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2000 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics