Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain

Changho Shin, Jeong Kyu Kim, Gwang Sik Kim, Hyunjae Lee, Changhwan Shin, Jong Kook Kim, Byung Jin Cho, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

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Engineering & Materials Science

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