Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain

Keyphrases

• Metal-semiconductor-metal 100%
• Threshold Voltage Shift 100%
• Random Dopant Fluctuation 100%
• Germanium MOSFET 100%
• Vth Variation 60%
• Fin Height 40%
• Fin Width 40%
• Zinc Oxide 20%
• Heavily Doped 20%
• Performance Degradation 20%
• Threshold Voltage 20%
• Oxide Interlayer 20%
• Drain Regions 20%
• 3D TCAD Simulation 20%
• Fin Parameter 20%

Engineering

• Dopants 100%
• Interlayer 100%
• Fin Height 33%
• Fin Width 33%
• Performance Degradation 16%
• Drain Region 16%

Material Science

• Doping (Additives) 100%
• Germanium 100%
• Zinc Oxide 20%