Random Si nanopillars for broadband antireflection in crystalline silicon solar cells

Junhee Choi, Taek Sung Lee, Doo Seok Jeong, Wook Seong Lee, Won Mok Kim, Kyeong Seok Lee, Donghwan Kim, Inho Kim

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


We demonstrate the fabrication of shallow Si nanopillar structures at a submicron scale which provides broadband antireflection for crystalline Si (c-Si) solar cells in the wavelength range of 350 nm-1100 nm. The Si random nanopillars were made by reactive ion etch (RIE) processing with thermally dewetted Sn metals as an etch mask. The diameters and coverages of the Si nanopillars were adjusted in a wide range of the nanoscale to microscale by varying the nominal thickness of the Sn metals and subsequent annealing temperatures. The height of the nanopillars was controlled by the RIE process time. The optimal size of the nanopillars, which are 340 nm in diameter and 150 nm in height, leads to the lowest average reflectance of 3.6%. We showed that the power conversion efficiency of the c-Si solar cells could be enhanced with the incorporation of optimally designed Si random nanopillars from 13.3% to 14.0%. The fabrication scheme of the Si nanostructures we propose in this study would be a cost-effective and promising light trapping technique for efficient c-Si solar cells.

Original languageEnglish
Article number375108
JournalJournal of Physics D: Applied Physics
Issue number37
Publication statusPublished - 2016 Aug 19

Bibliographical note

Publisher Copyright:
© 2016 IOP Publishing Ltd.


  • crystalline silicon solar cells
  • light trapping
  • silicon nanostructrues

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


Dive into the research topics of 'Random Si nanopillars for broadband antireflection in crystalline silicon solar cells'. Together they form a unique fingerprint.

Cite this