Rare-earth chloride seeded growth of GaN nano- and micro-crystals

M. A. Mastro, J. A. Freitas, R. T. Holm, C. R. Eddy, J. Caldwell, K. Liu, O. Glembocki, R. L. Henry, J. Kim

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl 3 seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured, confirming that Er 3+ ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed.

Original languageEnglish
Pages (from-to)6157-6161
Number of pages5
JournalApplied Surface Science
Issue number14
Publication statusPublished - 2007 May 15

Bibliographical note

Funding Information:
Research at the Naval Research Lab is supported by Office of Naval Research and ONR-Global (N00014-06-1-4046); support for M.A.M. was partially provided by the American Society for Engineering Education; support for J.K. was partially provided by Brain Korea 21 program in 2006.


  • Gallium nitride
  • Rare-earth metal

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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