Rare-earth chloride seeded growth of GaN nano- and micro-crystals

M. A. Mastro; J. A. Freitas; R. T. Holm; C. R. Eddy; J. Caldwell; K. Liu; O. Glembocki; R. L. Henry; J. Kim

doi:10.1016/j.apsusc.2007.01.073

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

M. A. Mastro, J. A. Freitas, R. T. Holm, C. R. Eddy, J. Caldwell, K. Liu, O. Glembocki, R. L. Henry, J. Kim

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl ₃ seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured, confirming that Er ³⁺ ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed.

Original language	English
Pages (from-to)	6157-6161
Number of pages	5
Journal	Applied Surface Science
Volume	253
Issue number	14
DOIs	https://doi.org/10.1016/j.apsusc.2007.01.073
Publication status	Published - 2007 May 15

Bibliographical note

Funding Information:
Research at the Naval Research Lab is supported by Office of Naval Research and ONR-Global (N00014-06-1-4046); support for M.A.M. was partially provided by the American Society for Engineering Education; support for J.K. was partially provided by Brain Korea 21 program in 2006.

Keywords

Gallium nitride
Rare-earth metal

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2007.01.073

Cite this

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title = "Rare-earth chloride seeded growth of GaN nano- and micro-crystals",

abstract = " A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl 3 seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured, confirming that Er 3+ ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed.",

keywords = "Gallium nitride, Rare-earth metal",

author = "Mastro, {M. A.} and Freitas, {J. A.} and Holm, {R. T.} and Eddy, {C. R.} and J. Caldwell and K. Liu and O. Glembocki and Henry, {R. L.} and J. Kim",

note = "Funding Information: Research at the Naval Research Lab is supported by Office of Naval Research and ONR-Global (N00014-06-1-4046); support for M.A.M. was partially provided by the American Society for Engineering Education; support for J.K. was partially provided by Brain Korea 21 program in 2006.",

year = "2007",

month = may,

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doi = "10.1016/j.apsusc.2007.01.073",

language = "English",

volume = "253",

pages = "6157--6161",

journal = "Applied Surface Science",

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T1 - Rare-earth chloride seeded growth of GaN nano- and micro-crystals

AU - Mastro, M. A.

AU - Freitas, J. A.

AU - Holm, R. T.

AU - Eddy, C. R.

AU - Caldwell, J.

AU - Liu, K.

AU - Glembocki, O.

AU - Henry, R. L.

AU - Kim, J.

N1 - Funding Information: Research at the Naval Research Lab is supported by Office of Naval Research and ONR-Global (N00014-06-1-4046); support for M.A.M. was partially provided by the American Society for Engineering Education; support for J.K. was partially provided by Brain Korea 21 program in 2006.

PY - 2007/5/15

Y1 - 2007/5/15

N2 - A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl 3 seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured, confirming that Er 3+ ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed.

AB - A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl 3 seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured, confirming that Er 3+ ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed.

KW - Gallium nitride

KW - Rare-earth metal

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U2 - 10.1016/j.apsusc.2007.01.073

DO - 10.1016/j.apsusc.2007.01.073

M3 - Article

AN - SCOPUS:34247114194

SN - 0169-4332

VL - 253

SP - 6157

EP - 6161

JO - Applied Surface Science

JF - Applied Surface Science

IS - 14

ER -

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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