Rashba-effect induced chiral magnetic domain-wall resistance

Y. Yin; J. Kim; D. Han; R. Lavrijsen; A. Van Den Brink; K. Lee; H. Lee; K. Kim; H. Swagten; B. Koopmans

doi:10.1109/INTMAG.2015.7157624

Rashba-effect induced chiral magnetic domain-wall resistance

Y. Yin, J. Kim, D. Han, R. Lavrijsen, A. Van Den Brink, K. Lee, H. Lee, K. Kim, H. Swagten, B. Koopmans

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Magnetic thin films with Dzyaloshinskii-Moriya interactions (DMI) are receiving enormous interest because of recent developments in the understanding of DMI's role in controlling the efficiency of domain wall (DW) motion [1] and in creating magnetic skyrmions [2]. Recently, interfacial DMI has been proposed to be directly related to Rashba spin-orbit coupling at magnetic interfaces [3]. Based on this theory, magnetic domain-wall (DW) resistance is predicted to gain an additional term originating from the Rashba effect. We call this extra term 'chiral resistance', as the sign opposite for DWs with different chiralities, which means that electrons have different scattering rates when moving through DWs with positive and negative chiralities. Since this chiral resistance solely originates from Rashba effect, a direct observation can help to illuminate the debated roles of DMI and Rashba versus Spin-Hall effects for fast current-driven domain wall motion [4]. Moreover, this chiral resistance can be very useful for designing future energy-efficient domain wall devices, e.g. if we combine it with the recently proposed electric-field control of DW chirality [5].

Original language	English
Title of host publication	2015 IEEE International Magnetics Conference, INTERMAG 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479973224
DOIs	https://doi.org/10.1109/INTMAG.2015.7157624
Publication status	Published - 2015 Jul 14
Event	2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China Duration: 2015 May 11 → 2015 May 15

Publication series

Name	2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other	2015 IEEE International Magnetics Conference, INTERMAG 2015
Country/Territory	China
City	Beijing
Period	15/5/11 → 15/5/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

ASJC Scopus subject areas

Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/INTMAG.2015.7157624

Cite this

Yin, Y., Kim, J., Han, D., Lavrijsen, R., Van Den Brink, A., Lee, K., Lee, H., Kim, K., Swagten, H., & Koopmans, B. (2015). Rashba-effect induced chiral magnetic domain-wall resistance. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 Article 7157624 (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7157624

Rashba-effect induced chiral magnetic domain-wall resistance. / Yin, Y.; Kim, J.; Han, D. et al.
2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7157624 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yin, Y, Kim, J, Han, D, Lavrijsen, R, Van Den Brink, A, Lee, K, Lee, H, Kim, K, Swagten, H & Koopmans, B 2015, Rashba-effect induced chiral magnetic domain-wall resistance. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7157624, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 15/5/11. https://doi.org/10.1109/INTMAG.2015.7157624

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AU - Lee, H.

AU - Kim, K.

AU - Swagten, H.

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N2 - Magnetic thin films with Dzyaloshinskii-Moriya interactions (DMI) are receiving enormous interest because of recent developments in the understanding of DMI's role in controlling the efficiency of domain wall (DW) motion [1] and in creating magnetic skyrmions [2]. Recently, interfacial DMI has been proposed to be directly related to Rashba spin-orbit coupling at magnetic interfaces [3]. Based on this theory, magnetic domain-wall (DW) resistance is predicted to gain an additional term originating from the Rashba effect. We call this extra term 'chiral resistance', as the sign opposite for DWs with different chiralities, which means that electrons have different scattering rates when moving through DWs with positive and negative chiralities. Since this chiral resistance solely originates from Rashba effect, a direct observation can help to illuminate the debated roles of DMI and Rashba versus Spin-Hall effects for fast current-driven domain wall motion [4]. Moreover, this chiral resistance can be very useful for designing future energy-efficient domain wall devices, e.g. if we combine it with the recently proposed electric-field control of DW chirality [5].

AB - Magnetic thin films with Dzyaloshinskii-Moriya interactions (DMI) are receiving enormous interest because of recent developments in the understanding of DMI's role in controlling the efficiency of domain wall (DW) motion [1] and in creating magnetic skyrmions [2]. Recently, interfacial DMI has been proposed to be directly related to Rashba spin-orbit coupling at magnetic interfaces [3]. Based on this theory, magnetic domain-wall (DW) resistance is predicted to gain an additional term originating from the Rashba effect. We call this extra term 'chiral resistance', as the sign opposite for DWs with different chiralities, which means that electrons have different scattering rates when moving through DWs with positive and negative chiralities. Since this chiral resistance solely originates from Rashba effect, a direct observation can help to illuminate the debated roles of DMI and Rashba versus Spin-Hall effects for fast current-driven domain wall motion [4]. Moreover, this chiral resistance can be very useful for designing future energy-efficient domain wall devices, e.g. if we combine it with the recently proposed electric-field control of DW chirality [5].

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Rashba-effect induced chiral magnetic domain-wall resistance

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