Rashba effect induced magnetoresistance in an InAs heterostructure

Youn Ho Park; Hyun Cheol Koo; Joonyeon Chang; Suk Hee Han; Jonghwa Eom

doi:10.1016/j.tsf.2011.03.063

Rashba effect induced magnetoresistance in an InAs heterostructure

Youn Ho Park, Hyun Cheol Koo, Joonyeon Chang, Suk Hee Han, Jonghwa Eom

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The Rashba field in a quantum channel produces spin splitting and population imbalance between spin-up and -down electrons. The channel resistance depends on the alignment between the applied field and the Rashba field because the applied magnetic field causes different mobilities for two types of spins. With an applied field of 2 T, the mobility difference between spin-up and -down electrons is 0.75%.

Original language	English
Pages (from-to)	8203-8206
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	23
DOIs	https://doi.org/10.1016/j.tsf.2011.03.063
Publication status	Published - 2011 Sept 30
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the NRF grant funded by MEST (No. 2010-0017457 ) and the KIST Institutional Program .

Keywords

Magnetoresistance
Quantum well
Rashba effect
Spin filtering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.03.063

Cite this

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title = "Rashba effect induced magnetoresistance in an InAs heterostructure",

abstract = "The Rashba field in a quantum channel produces spin splitting and population imbalance between spin-up and -down electrons. The channel resistance depends on the alignment between the applied field and the Rashba field because the applied magnetic field causes different mobilities for two types of spins. With an applied field of 2 T, the mobility difference between spin-up and -down electrons is 0.75%.",

keywords = "Magnetoresistance, Quantum well, Rashba effect, Spin filtering",

author = "Park, {Youn Ho} and Koo, {Hyun Cheol} and Joonyeon Chang and Han, {Suk Hee} and Jonghwa Eom",

note = "Funding Information: This work was supported by the NRF grant funded by MEST (No. 2010-0017457 ) and the KIST Institutional Program .",

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T1 - Rashba effect induced magnetoresistance in an InAs heterostructure

AU - Park, Youn Ho

AU - Koo, Hyun Cheol

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Eom, Jonghwa

N1 - Funding Information: This work was supported by the NRF grant funded by MEST (No. 2010-0017457 ) and the KIST Institutional Program .

PY - 2011/9/30

Y1 - 2011/9/30

N2 - The Rashba field in a quantum channel produces spin splitting and population imbalance between spin-up and -down electrons. The channel resistance depends on the alignment between the applied field and the Rashba field because the applied magnetic field causes different mobilities for two types of spins. With an applied field of 2 T, the mobility difference between spin-up and -down electrons is 0.75%.

AB - The Rashba field in a quantum channel produces spin splitting and population imbalance between spin-up and -down electrons. The channel resistance depends on the alignment between the applied field and the Rashba field because the applied magnetic field causes different mobilities for two types of spins. With an applied field of 2 T, the mobility difference between spin-up and -down electrons is 0.75%.

KW - Magnetoresistance

KW - Quantum well

KW - Rashba effect

KW - Spin filtering

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DO - 10.1016/j.tsf.2011.03.063

M3 - Article

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SN - 0040-6090

VL - 519

SP - 8203

EP - 8206

JO - Thin Solid Films

JF - Thin Solid Films

IS - 23

ER -

Rashba effect induced magnetoresistance in an InAs heterostructure

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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