Reactive sputtering of Al₂O₃ on AlGaN/GaN heterostructure field-effect transistor

Engineering & Materials Science

• Reactive sputtering 100%
• High electron mobility transistors 73%
• Leakage currents 68%
• Aluminum oxide 60%
• Current density 40%
• Oxides 36%
• Current voltage characteristics 27%
• Drain current 26%
• Electric potential 10%

Chemical Compounds

• Reactive Sputtering 94%
• Leakage Current 83%
• Field Effect 62%
• Drain Current 32%
• Current Density 30%
• Oxide 22%
• Voltage 15%
• Application 6%

Physics & Astronomy

• field effect transistors 49%
• sputtering 49%
• leakage 31%
• current density 18%
• oxides 15%
• high current 11%
• high voltages 11%
• electric potential 6%
• performance 5%