Keyphrases
Aluminum Oxide
100%
Al2O3 Layer
100%
Reactive Sputtering
100%
Heterostructure Field-effect Transistors
100%
GaN Heterostructure
100%
Leakage Current Density
66%
Oxide Layer
66%
Gate Leakage Current
66%
Current-voltage Characteristics
33%
Gate Oxide
33%
Device Application
33%
Device Performance
33%
Drain Current
33%
High Current
33%
Current Power
33%
Layer Effect
33%
Current Density-voltage Characteristics
33%
High Power Devices
33%
Engineering
Heterojunctions
100%
Field-Effect Transistor
100%
Reactive Sputtering
100%
Oxide Layer
66%
Current-Voltage Characteristic
33%
Gate Oxide
33%
Current Drain
33%
Device Performance
33%
Power Device
33%
Material Science
Heterojunction
100%
Al2O3
100%
Field Effect Transistor
100%
Oxide Compound
50%
Density
50%
Current Voltage Characteristics
25%
Power Device
25%