Reactive sputtering of Al₂O₃ on AlGaN/GaN heterostructure field-effect transistor

Keyphrases

• Aluminum Oxide 100%
• Al2O3 Layer 100%
• Reactive Sputtering 100%
• Heterostructure Field-effect Transistors 100%
• GaN Heterostructure 100%
• Leakage Current Density 66%
• Oxide Layer 66%
• Gate Leakage Current 66%
• Current-voltage Characteristics 33%
• Gate Oxide 33%
• Device Application 33%
• Device Performance 33%
• Drain Current 33%
• High Current 33%
• Current Power 33%
• Layer Effect 33%
• Current Density-voltage Characteristics 33%
• High Power Devices 33%

Engineering

• Heterojunctions 100%
• Field-Effect Transistor 100%
• Reactive Sputtering 100%
• Oxide Layer 66%
• Current-Voltage Characteristic 33%
• Gate Oxide 33%
• Current Drain 33%
• Device Performance 33%
• Power Device 33%

Material Science

• Heterojunction 100%
• Al2O3 100%
• Field Effect Transistor 100%
• Oxide Compound 50%
• Density 50%
• Current Voltage Characteristics 25%
• Power Device 25%