Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States

Juhee Jeon, Kyoungah Cho, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and charge carriers were accumulated (depleted) in these channels, generating the memory state “State 1 (State 0)”. Read pulses of 40 ns read these states with a retention time of 3 s, and the potential barrier formation and carrier accumulation were influenced by these read pulses. The potential barriers were analyzed, using junction voltage and current density to explore the memory states. Moreover, FBFETs exhibited nondestructive readout characteristics during the read operation, which depended on the read voltage and pulse width.

    Original languageEnglish
    Article number210
    JournalNanomaterials
    Volume14
    Issue number2
    DOIs
    Publication statusPublished - 2024 Jan

    Bibliographical note

    Publisher Copyright:
    © 2024 by the authors.

    Keywords

    • FBFET
    • quasi-nonvolatile memory
    • read operation
    • rising time
    • TCAD

    ASJC Scopus subject areas

    • General Chemical Engineering
    • General Materials Science

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