Realization of gated field emitters for electrophotonic applications using carbon nanotube line emitters directly grown into submicrometer holes

Y. H. Lee; Y. T. Jang; D. H. Kim; J. H. Ahn; B. Ju

doi:10.1002/1521-4095(200104)13:7<479::AID-ADMA479>3.0.CO;2-H

Realization of gated field emitters for electrophotonic applications using carbon nanotube line emitters directly grown into submicrometer holes

Y. H. Lee, Y. T. Jang, D. H. Kim, J. H. Ahn, B. Ju

Department of Physics

Research output: Contribution to journal › Article › peer-review

112 Citations (Scopus)

Abstract

The fabrication of the carbon nanotube (CNT) field emission picture element with gate electrodes and their basic field emission properties were described. Chemical vapor deposition (CVD) using catalytic metals is a cheap process for large area deposition of carbon nanotubes. The measurement results show that both aligned and randomly distributed carbon nanotubes (CNT) are suitable for field emission applications.

Original language	English
Pages (from-to)	479-482
Number of pages	4
Journal	Advanced Materials
Volume	13
Issue number	7
DOIs	https://doi.org/10.1002/1521-4095(200104)13:7<479::AID-ADMA479>3.0.CO;2-H
Publication status	Published - 2001 Apr 4

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/1521-4095(200104)13:7<479::AID-ADMA479>3.0.CO;2-H

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AU - Ahn, J. H.

AU - Ju, B.

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AB - The fabrication of the carbon nanotube (CNT) field emission picture element with gate electrodes and their basic field emission properties were described. Chemical vapor deposition (CVD) using catalytic metals is a cheap process for large area deposition of carbon nanotubes. The measurement results show that both aligned and randomly distributed carbon nanotubes (CNT) are suitable for field emission applications.

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Realization of gated field emitters for electrophotonic applications using carbon nanotube line emitters directly grown into submicrometer holes

Abstract

ASJC Scopus subject areas

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