Realization of one-diode-type resistive-switching memory with Cr-SrTiO 3 film

Min Yeong Song; Yujeong Seo; Yeon Soo Kim; Hee Dong Kim; Ho Myoung An; Bae Ho Park; Yun Mo Sung; Tae Geun Kim

doi:10.1143/APEX.5.091202

Realization of one-diode-type resistive-switching memory with Cr-SrTiO ₃ film

Min Yeong Song, Yujeong Seo, Yeon Soo Kim, Hee Dong Kim, Ho Myoung An, Bae Ho Park, Yun Mo Sung, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The authors report a silicon-based one-diode-type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr-SrTiO ₃/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator-metal transition property of the proposed device was explained using the space-charge-limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio (~10 ⁶), low reset current (~10 ^-11 A), high speed at low voltage (200 ns, 2 V), and reasonable endurance (>10 ⁴ cycles) and retention characteristics (>10 ⁴ s).

Original language	English
Article number	091202
Journal	Applied Physics Express
Volume	5
Issue number	9
DOIs	https://doi.org/10.1143/APEX.5.091202
Publication status	Published - 2012 Sept

Bibliographical note

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/APEX.5.091202

Cite this

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title = "Realization of one-diode-type resistive-switching memory with Cr-SrTiO 3 film",

abstract = "The authors report a silicon-based one-diode-type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr-SrTiO 3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator-metal transition property of the proposed device was explained using the space-charge-limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio (~10 6), low reset current (~10 -11 A), high speed at low voltage (200 ns, 2 V), and reasonable endurance (>10 4 cycles) and retention characteristics (>10 4 s).",

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AU - Song, Min Yeong

AU - Seo, Yujeong

AU - Kim, Yeon Soo

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Park, Bae Ho

AU - Sung, Yun Mo

AU - Kim, Tae Geun

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