The authors report a silicon-based one-diode-type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr-SrTiO 3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator-metal transition property of the proposed device was explained using the space-charge-limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio (~10 6), low reset current (~10 -11 A), high speed at low voltage (200 ns, 2 V), and reasonable endurance (>10 4 cycles) and retention characteristics (>10 4 s).
Copyright 2012 Elsevier B.V., All rights reserved.
ASJC Scopus subject areas
- Physics and Astronomy(all)