Realization of one-diode-type resistive-switching memory with Cr-SrTiO 3 film

Min Yeong Song, Yujeong Seo, Yeon Soo Kim, Hee Dong Kim, Ho Myoung An, Bae Ho Park, Yun Mo Sung, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


The authors report a silicon-based one-diode-type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr-SrTiO 3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator-metal transition property of the proposed device was explained using the space-charge-limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio (~10 6), low reset current (~10 -11 A), high speed at low voltage (200 ns, 2 V), and reasonable endurance (>10 4 cycles) and retention characteristics (>10 4 s).

Original languageEnglish
Article number091202
JournalApplied Physics Express
Issue number9
Publication statusPublished - 2012 Sept

Bibliographical note

Copyright 2012 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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