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Realization of Self-Rectifying and Self-Powered Resistive Random-Access Memory Memristor Using [001]-Oriented NaNbO3 Film Deposited on Sr2Nb3O10 Nanosheet at Low Temperatures

  • In Su Kim
  • , Bumjoo Kim
  • , Seok June Chae
  • , Sahn Nahm*
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Material Science