Recent Advances in Chemical Vapor Deposition of Bi₂O₂Se and Its Applications in Energy-Efficient Electronics

Two-dimensional (2D) materials have emerged as promising candidates for next-generation electronic and optoelectronic devices owing to their atomically thin nature and inherent immunity to short-channel effects. However, the integration of high-quality gate dielectrics has remained a major challenge for most 2D semiconductors, primarily because of their inert, dangling-bond-free surfaces, and the absence of stable native oxides. By contrast, bismuth oxyselenide (Bi₂O₂Se) combines high carrier mobility with the ability to form a thermodynamically stable native oxide possessing a high dielectric constant (κ). These properties enable the realization of low-defect, high-κ gate stacks, and have led to remarkable progress in the fabrication of Bi₂O₂Se-based field-effect transistors (FETs). This review highlights recent advancements in the synthesis of Bi₂O₂Se, with a particular focus on chemical vapor deposition (CVD) as a scalable and industry-compatible growth method. This article also highlights the various Bi₂O₂Se growth modes, such as in-plane, inclined, and vertical orientations. Additionally, the article discusses the evolution of Bi₂O₂Se FET architectures from planar to fin FET (FinFET)and gate-all-around (GAA) configurations. Recent discoveries of ferroelectricity in Bi₂O₂Se are also introduced for future energy-efficient electronics, enabling logic-in-memory and neuromorphic computing applications through ferroelectric-semiconductor FETs (FeS-FETs). Finally, the opportunities and perspectives associated with the incorporation of Bi₂O₂Se into future low-power and high-density logic applications are discussed.