Recombination properties of dislocations in GaN

Eugene B. Yakimov, Alexander Y. Polyakov, In Hwan Lee, Stephen J. Pearton

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27 Citations (Scopus)


The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation recombination strength, was calculated. The results suggest that dislocations in n-GaN giving contrast in EBIC are charged and surrounded by a space charge region, as evidenced by the observed dependence of dislocation recombination strength on dopant concentration. For moderate (below ∼108 cm-2) dislocation densities, these defects do not primarily determine the average diffusion length of nonequilibrium charge carriers, although locally, dislocations are efficient recombination sites. In general, it is observed that the effect of the growth method [standard metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth versions of MOCVD, and hydride vapor phase epitaxy] on the recombination activity of dislocations is not very pronounced, although the average diffusion lengths can widely differ for various samples. The glide of basal plane dislocations at room temperature promoted by low energy electron irradiation does not significantly change the recombination properties of dislocations.

Original languageEnglish
Article number161543
JournalJournal of Applied Physics
Issue number16
Publication statusPublished - 2018 Apr 28

Bibliographical note

Funding Information:
The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of the Increase Competitiveness Program of NUST(MISiS) (No. K2-2014-055). The work at the Korea University was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (No. 2017R1A2B3006141). The work at UF was supported by DTRA Grant No. HDTRA1-17-1-0011.

Publisher Copyright:
© 2017 Author(s).

ASJC Scopus subject areas

  • General Physics and Astronomy


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