Reconfigurable Logic-In-Memory Cell Comprising Triple-Gated Feedback Field-Effect Transistors

Jongseong Han, Jaemin Son, Juhee Jeon, Yunwoo Shin, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review


A reconfigurable logic-in-memory (R-LIM) cell performs logic-in-memory functions as well as reconfigurable logic gates. The R-LIM cell is constructed with triple-gated (TG) feedback field-effect transistors (FBFETs) that are reconfigured in n-channel or p-channel modes via electrostatic doping. Each TG FBFET has one control gate electrode and two program-gate electrodes that determine the channel mode. Their reconfigurability enables the symmetrical operation of the n-channel and p-channel modes through an on-current ratio of 1:04. Furthermore, the R-LIM cell performs eight Boolean logic operations, storing the logic outputs for ≈100 s under zero-bias conditions. The R-LIM cell is useful for developing in-memory computing systems with high energy efficiency and functional logic.

Original languageEnglish
Article number2300526
JournalAdvanced Electronic Materials
Issue number12
Publication statusPublished - 2023 Dec

Bibliographical note

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.


  • logic-in-memory
  • positive feedback loops
  • reconfigurable logic gates
  • reconfigurable logic-in-memory cells
  • triple-gated feedback field-effect transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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