Reconfigurable Logic-in-Memory Using Silicon Transistors

Doohyeok Lim; Kyoungah Cho; Sangsig Kim

doi:10.1002/admt.202101504

Reconfigurable Logic-in-Memory Using Silicon Transistors

Doohyeok Lim, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this paper, a novel reconfigurable logic-in-memory built using silicon transistors is proposed. The silicon transistor can be reconfigured as p- or n-switchable memory by controlling the polarity of the gate inputs. These electrical characteristics are enabled by utilizing holes or electrons as the majority charge carriers for the positive feedback loop. The reconfigurable logic-in-memory functions of the NOT and YES gates with the same cell comprising a silicon transistor and load resistor are demonstrated. Moreover, it is revealed that a two-input reconfigurable logic-in-memory cell, based on two silicon transistors and a load resistor, functions as negative-AND and OR gates. This novel reconfigurable logic-in-memory technology can facilitate the development of next-generation low-power and high-performance computing.

Original language	English
Article number	2101504
Journal	Advanced Materials Technologies
Volume	7
Issue number	10
DOIs	https://doi.org/10.1002/admt.202101504
Publication status	Published - 2022 Oct 10

Bibliographical note

Funding Information:
This work was supported in part by the Ministry of Trade, Industry & Energy (MOTIE) (10067791) and Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This study was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (2020R1A2C3004538), the Brain Korea 21 Plus Project of 2021 through the NRF funded by the Ministry of Science, ICT & Future Planning, and the Korea University Grant.

Funding Information:
The support by the Open Access Publication Fund of the University of Duisburg-Essen is acknowledged. The funding body is independent of the design of the study and collection, analysis, and interpretation of data and in writing the manuscript. Open access funding enabled and organized by the project DEAL.

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

Keywords

in-memory computing
logic-in-memory
positive feedback mechanism
reconfigurable electronics
silicon transistors

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Industrial and Manufacturing Engineering

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10.1002/admt.202101504

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abstract = "In this paper, a novel reconfigurable logic-in-memory built using silicon transistors is proposed. The silicon transistor can be reconfigured as p- or n-switchable memory by controlling the polarity of the gate inputs. These electrical characteristics are enabled by utilizing holes or electrons as the majority charge carriers for the positive feedback loop. The reconfigurable logic-in-memory functions of the NOT and YES gates with the same cell comprising a silicon transistor and load resistor are demonstrated. Moreover, it is revealed that a two-input reconfigurable logic-in-memory cell, based on two silicon transistors and a load resistor, functions as negative-AND and OR gates. This novel reconfigurable logic-in-memory technology can facilitate the development of next-generation low-power and high-performance computing.",

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Reconfigurable Logic-in-Memory Using Silicon Transistors

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Bibliographical note

Keywords

ASJC Scopus subject areas

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