@article{e2273230872a4bd28556080d2122c6c0,
title = "Reconfigurable Si Nanowire Nonvolatile Transistors",
abstract = "Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.",
keywords = "Schottky barrier, intrinsic silicon nanowires, nonvolatile transistors, reconfigurable field effect transistors, reconfigurable memory",
author = "Park, {So Jeong} and Jeon, {Dae Young} and Sabrina Piontek and Matthias Grube and Johannes Ocker and Violetta Sessi and Andr{\'e} Heinzig and Jens Trommer and Kim, {Gyu Tae} and Thomas Mikolajick and Weber, {Walter M.}",
note = "Funding Information: This work was supported by the DFG projects Repronano II (WE 4853/1-2, WE 4853/1-3, and MI 1247/6-2), the DFG cluster of Excellence Center for Advancing Electronics Dresden (CfAED), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511, NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE), Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology(KIST) Institutional Program and a Korea University Grant. Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
year = "2018",
month = jan,
doi = "10.1002/aelm.201700399",
language = "English",
volume = "4",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "1",
}