Reconfigurable Si Nanowire Nonvolatile Transistors

So Jeong Park, Dae Young Jeon, Sabrina Piontek, Matthias Grube, Johannes Ocker, Violetta Sessi, André Heinzig, Jens Trommer, Gyu Tae Kim, Thomas Mikolajick, Walter M. Weber

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.

Original languageEnglish
Article number1700399
JournalAdvanced Electronic Materials
Issue number1
Publication statusPublished - 2018 Jan

Bibliographical note

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


  • Schottky barrier
  • intrinsic silicon nanowires
  • nonvolatile transistors
  • reconfigurable field effect transistors
  • reconfigurable memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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