Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping

Taekham Kim, Doohyeok Lim, Jaemin Son, Kyoungah Cho, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    In this study, we perform reconfigurable n- and p-channel operations of a tri-top-gate field-effect transistor (FET) made of a p+-i-n+ silicon nanowire (SiNW). In the reconfigurable FET (RFET), two polarity gates and one control gate induce virtual electrostatic doping in the SiNW channel. The polarity gates are electrically connected to each other and program the channel type, while the control gate modulates the flow of charge carriers in the SiNW channel. The SiNW RFET features simple device design, symmetrical electrical characteristics in the n- and p-channel operation modes using p+-i-n+ diode characteristics, and both operation modes exhibit high ON/OFF ratios (∼106) and high ON currents (∼1 μA μm-1). The proposed device is demonstrated experimentally using a fully CMOS-compatible top-down processes.

    Original languageEnglish
    Article number415203
    JournalNanotechnology
    Volume33
    Issue number41
    DOIs
    Publication statusPublished - 2022 Oct 8

    Bibliographical note

    Publisher Copyright:
    © 2022 The Author(s). Published by IOP Publishing Ltd.

    Keywords

    • electrostatic doping
    • polarity control
    • reconfigurable field-effect transistors
    • silicon nanowires

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • General Materials Science
    • Mechanics of Materials
    • Mechanical Engineering
    • Electrical and Electronic Engineering

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