Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing
- Byung Jae Kim
- , Ya Hsi Hwang
- , Shihyun Ahn
- , Weidi Zhu
- , Chen Dong
- , Liu Lu
- , Fan Ren
- , M. R. Holzworth
- , Kevin S. Jones
- , Stephen J. Pearton
- , David J. Smith
- , Jihyun Kim
- , Ming Lan Zhang
Research output: Contribution to journal › Article › peer-review
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