Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing

Hyun Gi Hong; S. S. Kim; D. Y. Kim; Takhee Lee; Kyoung Kook Kim; June O. Song; J. H. Cho; Tae Yeon Seong

doi:10.1002/pssa.200622352

Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing

Hyun Gi Hong, S. S. Kim, D. Y. Kim, Takhee Lee, Kyoung Kook Kim, June O. Song, J. H. Cho, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The effect of rapid-thermal-annealing on the performance of near-UV GaN-based light-emitting diodes (LEDs) fabricated with nano-patterned p-type electrodes has been investigated. One-dimensional (1-D) nano-patterns were formed on Cu-doped indium oxide (CIO)/indium tin oxide (ITO) p-electrode by surface relief grating and dry etching techniques. After the nano-patterning, some of the samples are rapidthermal-annealed at 530 and 630°C in either air or nitrogen ambient. LEDs made with samples annealed 530°C show much better electrical characteristics as compared to unannealed samples. In particular, LEDs with samples annealed 530°C in air show higher output power (at 20 mA) and much reduced leakage current as compared to LEDs with unannealed samples.

Original language	English
Pages (from-to)	881-886
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	204
Issue number	3
DOIs	https://doi.org/10.1002/pssa.200622352
Publication status	Published - 2007 Mar

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing",

abstract = "The effect of rapid-thermal-annealing on the performance of near-UV GaN-based light-emitting diodes (LEDs) fabricated with nano-patterned p-type electrodes has been investigated. One-dimensional (1-D) nano-patterns were formed on Cu-doped indium oxide (CIO)/indium tin oxide (ITO) p-electrode by surface relief grating and dry etching techniques. After the nano-patterning, some of the samples are rapidthermal-annealed at 530 and 630°C in either air or nitrogen ambient. LEDs made with samples annealed 530°C show much better electrical characteristics as compared to unannealed samples. In particular, LEDs with samples annealed 530°C in air show higher output power (at 20 mA) and much reduced leakage current as compared to LEDs with unannealed samples.",

author = "Hong, {Hyun Gi} and Kim, {S. S.} and Kim, {D. Y.} and Takhee Lee and Kim, {Kyoung Kook} and Song, {June O.} and Cho, {J. H.} and Seong, {Tae Yeon}",

year = "2007",

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doi = "10.1002/pssa.200622352",

language = "English",

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pages = "881--886",

journal = "Physica Status Solidi (A) Applications and Materials Science",

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AU - Hong, Hyun Gi

AU - Kim, S. S.

AU - Kim, D. Y.

AU - Lee, Takhee

AU - Kim, Kyoung Kook

AU - Song, June O.

AU - Cho, J. H.

AU - Seong, Tae Yeon

PY - 2007/3

Y1 - 2007/3

N2 - The effect of rapid-thermal-annealing on the performance of near-UV GaN-based light-emitting diodes (LEDs) fabricated with nano-patterned p-type electrodes has been investigated. One-dimensional (1-D) nano-patterns were formed on Cu-doped indium oxide (CIO)/indium tin oxide (ITO) p-electrode by surface relief grating and dry etching techniques. After the nano-patterning, some of the samples are rapidthermal-annealed at 530 and 630°C in either air or nitrogen ambient. LEDs made with samples annealed 530°C show much better electrical characteristics as compared to unannealed samples. In particular, LEDs with samples annealed 530°C in air show higher output power (at 20 mA) and much reduced leakage current as compared to LEDs with unannealed samples.

AB - The effect of rapid-thermal-annealing on the performance of near-UV GaN-based light-emitting diodes (LEDs) fabricated with nano-patterned p-type electrodes has been investigated. One-dimensional (1-D) nano-patterns were formed on Cu-doped indium oxide (CIO)/indium tin oxide (ITO) p-electrode by surface relief grating and dry etching techniques. After the nano-patterning, some of the samples are rapidthermal-annealed at 530 and 630°C in either air or nitrogen ambient. LEDs made with samples annealed 530°C show much better electrical characteristics as compared to unannealed samples. In particular, LEDs with samples annealed 530°C in air show higher output power (at 20 mA) and much reduced leakage current as compared to LEDs with unannealed samples.

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Recovery of dry etch-induced damage of nano-patterned GaN-based light-emitting diodes by rapid-thermal-annealing

Abstract

ASJC Scopus subject areas

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