Reduced charge fluctuations in individual SnO 2 nanowires by suppressed surface reactions

Junghwan Huh, Min Kyu Joo, Doyoung Jang, Jong Heun Lee, Gyu-Tae Kim

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


The interactions between metal oxide nanowires and molecular species can significantly affect the electrical properties of metal oxide nanowires. A passivation process is needed to stabilize the electrical characteristics, regardless of the environmental changes. Herein, we investigated the passivation effects of a polymethyl methacrylate (PMMA) layer on SnO 2 nanowire (NW) field-effect transistors (FETs). As a result of the PMMA coating, the electrical properties of the SnO 2 NW FETs improved. The electrical noise behavior in both non-passivated and passivated devices can be described with the carrier number fluctuation model associated with the trapping and the release of charge carriers at the surface. The non-passivated devices exhibited higher noise levels than those of the passivated devices. These results demonstrate that surface passivation can lead to the suppression of dynamic responses (electron trapping/release events and scattering fluctuations).

Original languageEnglish
Pages (from-to)24012-24016
Number of pages5
JournalJournal of Materials Chemistry
Issue number45
Publication statusPublished - 2012 Dec 7

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry


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