Reduced charge fluctuations in individual SnO ₂ nanowires by suppressed surface reactions

The interactions between metal oxide nanowires and molecular species can significantly affect the electrical properties of metal oxide nanowires. A passivation process is needed to stabilize the electrical characteristics, regardless of the environmental changes. Herein, we investigated the passivation effects of a polymethyl methacrylate (PMMA) layer on SnO ₂ nanowire (NW) field-effect transistors (FETs). As a result of the PMMA coating, the electrical properties of the SnO ₂ NW FETs improved. The electrical noise behavior in both non-passivated and passivated devices can be described with the carrier number fluctuation model associated with the trapping and the release of charge carriers at the surface. The non-passivated devices exhibited higher noise levels than those of the passivated devices. These results demonstrate that surface passivation can lead to the suppression of dynamic responses (electron trapping/release events and scattering fluctuations).