Abstract
The interactions between metal oxide nanowires and molecular species can significantly affect the electrical properties of metal oxide nanowires. A passivation process is needed to stabilize the electrical characteristics, regardless of the environmental changes. Herein, we investigated the passivation effects of a polymethyl methacrylate (PMMA) layer on SnO 2 nanowire (NW) field-effect transistors (FETs). As a result of the PMMA coating, the electrical properties of the SnO 2 NW FETs improved. The electrical noise behavior in both non-passivated and passivated devices can be described with the carrier number fluctuation model associated with the trapping and the release of charge carriers at the surface. The non-passivated devices exhibited higher noise levels than those of the passivated devices. These results demonstrate that surface passivation can lead to the suppression of dynamic responses (electron trapping/release events and scattering fluctuations).
Original language | English |
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Pages (from-to) | 24012-24016 |
Number of pages | 5 |
Journal | Journal of Materials Chemistry |
Volume | 22 |
Issue number | 45 |
DOIs | |
Publication status | Published - 2012 Dec 7 |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Chemistry