Abstract
This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/singlewalled carbon nanotube (SWNT) films using various p-type dopants and its application to GaNbased light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (ℙ) of the films using chemical doping with AuCl3 , poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3 ; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.
Original language | English |
---|---|
Pages (from-to) | 6203-6208 |
Number of pages | 6 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 16 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2016 Jun |
Bibliographical note
Funding Information:This work was supported by a National Research Foundation of Korea grant funded by the Korean Government (MEST) under grant number 2011-0028769, Korea.
Publisher Copyright:
© 2016 American Scientific Publishers.
Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
Keywords
- AuCl
- Dip-Coating methods.
- MoO
- P-GaN
- PEDOT:PSS
- RGO/SWNTs
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics