Abstract
This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.
Original language | English |
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Pages (from-to) | 454-459 |
Number of pages | 6 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 17 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2017 |
Bibliographical note
Funding Information:This work was supported by a National Research Foundation of Korea grant funded by the Korean Government (MEST) under grant number 2011-0028769, Korea.
Publisher Copyright:
Copyright © 2017 American Scientific Publishers All rights reserved.
Keywords
- GaN
- Light-emitting diodes
- Reduced graphene oxide
- Single-walled carbon nanotube
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics