Reduced graphene oxide/single-walled carbon nanotube hybrid films using various p-type dopants and their application to gan-based light-emitting diodes

Byeong Ryong Lee, Tae Geun Kim

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

    Original languageEnglish
    Pages (from-to)454-459
    Number of pages6
    JournalJournal of Nanoscience and Nanotechnology
    Volume17
    Issue number1
    DOIs
    Publication statusPublished - 2017

    Bibliographical note

    Funding Information:
    This work was supported by a National Research Foundation of Korea grant funded by the Korean Government (MEST) under grant number 2011-0028769, Korea.

    Publisher Copyright:
    Copyright © 2017 American Scientific Publishers All rights reserved.

    Keywords

    • GaN
    • Light-emitting diodes
    • Reduced graphene oxide
    • Single-walled carbon nanotube

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • Biomedical Engineering
    • General Materials Science
    • Condensed Matter Physics

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