Reducing proton radiation vulnerability in AlGaN/GaN high electron mobility transistors with residual strain relief
- Nahid Sultan Al-Mamun
- , Joonyup Bae
- , Jihyun Kim
- , Aman Haque*
- , Douglas E. Wolfe
- , Fan Ren
- , Stephen J. Pearton
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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