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Reducing proton radiation vulnerability in AlGaN/GaN high electron mobility transistors with residual strain relief

  • Nahid Sultan Al-Mamun
  • , Joonyup Bae
  • , Jihyun Kim
  • , Aman Haque*
  • , Douglas E. Wolfe
  • , Fan Ren
  • , Stephen J. Pearton
  • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Material Science